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HUF75637S3S

Part No HUF75637S3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET | MOSFET N-CH 100V 44A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 44A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 30mOhm at 44A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 108nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1700pF at 25V
Power Dissipation (Maximum) 155W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1182439-HUF75637S3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF75637S3S CAD Model

Description

Product Overview: HUF75637S3S - ON Semiconductor

The HUF75637S3S is a high-performance N-Channel UltraFET Power MOSFET produced by ON Semiconductor, a leading supplier in the semiconductor industry. This power MOSFET is designed to cater to a wide range of applications that require fast switching, low on-resistance, and high current handling capabilities.

With its robust structure, the HUF75637S3S is an ideal choice for power supply and power conversion applications in computing, consumer electronics, and industrial systems. Its features make it particularly well-suited for synchronous rectification in SMPS (Switched Mode Power Supplies), high-speed power switching circuits, and as a high-side switch in advanced power management systems.

Key Features:

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Current Handling: Capable of handling high continuous drain currents, the HUF75637S3S is suitable for demanding applications that require robust current flow.
  • Fast Switching Speed: The fast switching capability ensures minimal switching losses and is crucial for high-frequency operations.
  • Robust Thermal Performance: With an excellent thermal design, the MOSFET operates reliably even under high temperature conditions, ensuring longevity and stable performance.
  • Logic Level Gate Drive: The device can be driven by logic-level voltages, which simplifies the gate drive circuitry and is compatible with microcontroller outputs.

Specifications:

Parameter Value V<sub>DS 100V I<sub>D (Continuous) 56A R<sub>DS(on) 8.0mΩ Package TO-263

The HUF75637S3S is available in a TO-263 package, which provides a compact form factor while allowing for effective heat dissipation. ON Semiconductor ensures that this product meets the highest quality and performance standards, making it a reliable component for your power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5717 $60.0285
250+ $0.4689 $117.2250
385+ $0.4551 $175.2135
525+ $0.4401 $231.0525
680+ $0.4250 $289.0000
910+ $0.3812 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,600 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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