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MBT3946DW1T1

Part No MBT3946DW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description Dual General Purpose Transistors | TRANS NPN/PNP 40V 0.2A SOT363
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Status Obsolete
Transistor Type NPN, PNP
Current - Collector (Ic) (Maximum) 200mA
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 300mV at 5mA, 50mA / 400mV at 5mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 10mA, 1V
Maximum Power 150mW
Frequency - Transition 300MHz, 250MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Family Part Number MBT3946D
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1216547-MBT3946DW1T1
Manufacturer Homepage www.lrc.cn/
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian MBT3946DW1T1 CAD Model

Description

ON Semiconductor MBT3946DW1T1 - Dual General Purpose Transistor

The ON Semiconductor MBT3946DW1T1 is a versatile and high-performance dual general purpose transistor that is designed to cater to a wide array of electronic applications. This device is a testament to ON Semiconductor's commitment to providing innovative solutions that enhance energy efficiency and power management.

This product is configured in a compact SOT-363 package, which makes it suitable for space-constrained applications. It features two transistors in a single package, which can significantly reduce the board space required. The dual configuration also simplifies circuit design and enhances reliability by reducing component count.

The MBT3946DW1T1 transistor operates with a collector-emitter voltage (VCEO) of 40V, collector current (IC) of 200mA, and a power dissipation of 225mW. The device offers excellent current gain characteristics with a minimum hFE of 100 at 10mA VCE, ensuring high efficiency in amplification applications. Its low collector-emitter saturation voltage helps to minimize voltage drops and improve power efficiency.

This ON Semiconductor product is designed for general-purpose amplifier and switching applications. It is commonly used in consumer electronics, industrial control systems, and telecommunications equipment, among other electronic systems. The MBT3946DW1T1 is well-suited for applications that require a combination of high-speed switching and amplification, such as signal processing, power management, and motor control circuits.

The device's robust construction ensures reliable performance in a broad range of operating conditions. It is also characterized by its low on-state resistance, which contributes to its low power consumption and excellent thermal performance. With its superior specifications and dual-transistor design, the MBT3946DW1T1 from ON Semiconductor is an ideal choice for designers looking for a compact, efficient, and reliable general-purpose transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,925+ $0.0192 $56.1600
7,145+ $0.0157 $112.1765
11,030+ $0.0152 $167.6560
15,155+ $0.0148 $224.2940
19,690+ $0.0142 $279.5980
26,320+ $0.0128 $336.8960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 138,000 pieces
MOQ: 2925 pcs
Order Increment : 1 pcs
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