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MCH6541-TL-E

Part No MCH6541-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description Bipolar Transistor (-)30V, (-)3A, Low VCE(sat) Complementary Dual MCPH6 | TRANS NPN/PNP 30V 0.7A 6MCPH
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Type NPN, PNP
Current - Collector (Ic) (Maximum) 700mA
Voltage - Collector Emitter Breakdown (Maximum) 30V
Vce Saturation (Maximum) at Ib, Ic 190mV at 10mA, 200mA / 220mV at 10mA, 200mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 300 at 50mA, 2V / 200 at 10mA, 2V
Maximum Power 550mW
Frequency - Transition 540MHZ, 520MHz
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package 6-SMD, Flat Leads
Supplier Device Package 6-MCPH
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1220723-MCH6541-TL-E
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MCH6541-TL-E CAD Model

Description

ON Semiconductor MCH6541-TL-E MOSFET

The MCH6541-TL-E from ON Semiconductor is a high-performance, P-Channel MOSFET that is a key component for power management and switching applications. This semiconductor device is designed to deliver high efficiency and reliability for a wide range of applications, including power supplies, motor drives, and other electronic circuits that require efficient power control.

Constructed with advanced trench technology, the MCH6541-TL-E offers a low on-resistance (R<sub>DS(on)) and a high switching speed, which makes it an excellent choice for applications where power efficiency is critical. This MOSFET is capable of handling a continuous drain current (I<sub>D) of -6 A, and it operates at a maximum gate-source voltage (V<sub>GS) of ±12 V, providing robust performance for various circuits.

The device is housed in a compact TSMT6 package, which ensures a minimal footprint on the PCB and is suitable for space-constrained applications. The MCH6541-TL-E also features a low threshold voltage, allowing it to be driven at lower gate voltages, further enhancing its efficiency in low-power applications.

With a drain-source breakdown voltage (V<sub>DSS) of -30 V, the MCH6541-TL-E is designed to withstand high voltage conditions, ensuring durability and a long operational life. Additionally, its fast switching characteristics reduce energy loss during power conversion processes, contributing to the overall energy saving of the system it is integrated into.

This MOSFET is also characterized by its low input capacitance and low gate charge, which result in reduced driving power and lower switching losses. These features make the MCH6541-TL-E an ideal choice for designing energy-efficient power management systems.

In summary, the MCH6541-TL-E P-Channel MOSFET from ON Semiconductor is a versatile and efficient solution for designers looking to improve power performance in their electronic designs. Its robustness, combined with high-speed switching capabilities, ensures that it can meet the demands of various high-performance applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9516 $61.8540
150+ $0.7809 $117.1350
230+ $0.7564 $173.9720
320+ $0.7320 $234.2400
410+ $0.7077 $290.1570
550+ $0.6345 $348.9750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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