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MCH6601-TL-E

Part No MCH6601-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 0.2A MCPH6  /  Mosfet Array 2 P-Channel (Dual) 30V 200mA 800mW Surface Mount 6-MCPH
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 10.4Ohm @ 50mA, 4V
Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V
Power - Max 800mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package 6-MCPH
Base Product Number MCH66
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 999364-MCH6601-TL-E
Ultra Librarian 3D Model Ultra Librarian MCH6601-TL-E CAD Model

Description

ON Semiconductor MCH6601-TL-E Power MOSFET

The MCH6601-TL-E is a high-performance power MOSFET from ON Semiconductor, designed for a variety of applications requiring efficient power management and high-speed switching. This device is a part of the MOSFET portfolio that offers designers a balance between low on-resistance and cost-effectiveness, without compromising on quality and reliability.

Key Features

  • Low On-Resistance: The MCH6601-TL-E boasts an incredibly low on-resistance, which minimizes conduction losses and improves overall efficiency in power circuits.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is well-suited for high-frequency applications, contributing to better performance in power conversion and regulation tasks.
  • Compact Design: Housed in a small and surface-mountable package, the MCH6601-TL-E is ideal for space-constrained applications, allowing for more compact and integrated designs.
  • High Reliability: Manufactured by ON Semiconductor, a leader in the semiconductor industry, this MOSFET is built to meet high-quality standards, ensuring long-term reliability for critical applications.
  • Low Gate Charge: The device features a low gate charge, which reduces the energy required to turn the MOSFET on and off, thus conserving power and reducing heat generation.

Applications

The MCH6601-TL-E is versatile and can be used in a wide range of applications, including:

  • Power management modules
  • DC-DC converters
  • Motor control circuits
  • Switching regulators
  • Battery-powered devices
  • LED lighting systems

Technical Specifications

Some of the core technical specifications of the MCH6601-TL-E include a drain-to-source voltage (Vdss) of 30V, a continuous drain current (Id) of 6A, and a power dissipation (Pd) of 1.25W. It operates within a junction temperature range of -55°C to 150°C, making it suitable for use in harsh environments.

In summary, the MCH6601-TL-E from ON Semiconductor is a robust and efficient solution for designers who require a power MOSFET that delivers both high performance and reliability in a compact form factor.

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