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MJE13003

Part No MJE13003
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 400V 1.5A 1400mW 3-Pin(3+Tab) TO-225 Box / TRANS NPN 400V 1.5A TO225
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 400V
Max Vce (sat) 3V @ 500mA, 1.5A
Typical Gain (hFE) (Min) 8 @ 500mA, 2V
Maximum Power Dissipation 1.4W
Frequency - Transition 10MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-225AA
Win Source Part Number 003647-MJE13003
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MJE13003
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China, Malaysia , United States of America, Philippines
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MJE13003 CAD Model

Description

The MJE13003 is a versatile and high-performance NPN bipolar power transistor designed and manufactured by ON Semiconductor. This robust component is engineered for high-voltage and high-speed power switching applications, making it an ideal choice for a variety of electronic circuits and products.

With its capability to handle significant voltage and current, the MJE13003 is commonly used in power supplies, lighting circuits, and as a switch in various electronic devices. It is particularly well-suited for use in compact power adapters, energy-saving lamps, and chargers, where efficiency and reliability are paramount.

Key Features:

  • High Voltage Capability: The MJE13003 can withstand voltages up to 400V, providing a wide safety margin for applications that experience voltage spikes or surges.
  • High Current Handling: This transistor can handle continuous collector currents up to 1.5A, making it suitable for driving moderate loads.
  • High Switching Speed: With a transition frequency of 4MHz, the MJE13003 enables fast switching, essential for reducing losses in power conversion applications.
  • Low Saturation Voltage: The low V<sub>CE(sat) minimizes on-state power dissipation, contributing to the overall efficiency of the circuit.
  • Rugged Design: The device is designed to endure harsh operating conditions, ensuring long-term reliability and stability.

Applications:

  • Switching regulators
  • SMPS (Switched Mode Power Supplies)
  • Power inverters
  • Motor controls
  • Lighting systems

The MJE13003 is housed in a TO-220 package, which is known for its excellent thermal performance, making it capable of operating at higher temperatures without the risk of overheating. Furthermore, its standardized form factor allows for easy mounting on printed circuit boards and compatibility with a wide range of heatsinks.

ON Semiconductor is committed to providing high-quality components that meet the rigorous demands of modern electronics. The MJE13003 is a testament to this commitment, offering both performance and durability for designers and engineers looking to create efficient and reliable electronic systems.

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