The SCTH90N65G2V-7 is a state-of-the-art Silicon Carbide (SiC) Power MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This advanced power MOSFET is designed to meet the high-efficiency and reliability requirements of modern power applications, making it an ideal choice for energy-sensitive sectors such as renewable energy systems, electric vehicles, and high-performance power supplies.

This cutting-edge device features a robust and reliable SiC material that provides superior thermal performance and higher efficiency compared to traditional silicon-based MOSFETs. With a drain-source voltage (V<sub>DS) of 650V and a continuous drain current (I<sub>D) of 90A at 25°C, the SCTH90N65G2V-7 can handle high power applications with ease. Its low on-resistance (R<sub>DS(on)) of just 65 mΩ maximizes power efficiency, reducing energy losses during operation.

The SCTH90N65G2V-7 is encapsulated in an H2PAK-7 package, which is known for its high level of integration and compact footprint. This packaging is not only space-efficient but also offers excellent thermal characteristics that enhance the overall performance and longevity of the MOSFET. Additionally, the package is designed for easy mounting, making it user-friendly for both prototyping and mass production.

With a maximum operating temperature of 175°C, this MOSFET is built to withstand harsh environments and maintain stable operation under thermal stress. The device also includes an intrinsic body diode, which provides fast switching performance and further contributes to the efficiency of the system.

The SCTH90N65G2V-7 is a testament to STMicroelectronics' commitment to innovation in the semiconductor industry. It is a perfect blend of performance, efficiency, and reliability, making it an excellent choice for designers looking to create high-performance, energy-efficient power conversion systems.

Key Features:

• 650V drain-source voltage (V<sub>DS)
• 90A continuous drain current (I<sub>D) at 25°C
• 65 mΩ on-resistance (R<sub>DS(on))
• High-temperature operation up to 175°C
• H2PAK-7 package for optimal thermal performance
• Intrinsic body diode for fast switching