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MJE200G

Part No MJE200G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 5A TO225AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1.8V @ 1A, 5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 45 @ 2A, 1V
Maximum Power Dissipation 15W
Frequency - Transition 65MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-225AA
Win Source Part Number 023373-MJE200G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MJE200G CAD Model

Description

ON Semiconductor MJE200G NPN Power Transistor

The MJE200G is a versatile NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for high-voltage and high-speed power switching applications. This power transistor is suitable for a wide range of uses, including but not limited to, line-operated applications such as relay and solenoid drivers, motor controls, amplifiers, and power regulators.

Key Features:

  • Voltage and Current Ratings: The MJE200G boasts a collector-emitter voltage (V<sub>CEO) of up to 40V and a collector current (I<sub>C) capability of 5A, making it suitable for moderately high-power circuits.
  • Power Dissipation: With a power dissipation of 20W, this transistor can handle significant energy without overheating, provided that adequate heat sinking is in place.
  • High Switching Speed: The device features a fast switching speed, which is essential for applications where efficiency and high-frequency operation are critical.
  • TO-225 Package: The MJE200G comes in a TO-225 package, which is designed for through-hole mounting, making it easy to integrate into a variety of circuit boards.
  • Complementary PNP Transistor: It has a complementary PNP partner, the MJE210G, allowing designers to create push-pull configurations for applications requiring balanced drive characteristics.

Applications:

The MJE200G is ideal for a range of applications, including:

  • Switch mode power supplies (SMPS)
  • Motor control circuits
  • Audio amplifiers
  • High-speed switching circuits
  • Power regulators
  • Driver circuits for relays and solenoids

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the MJE200G is no exception. It is manufactured to meet high standards of performance and reliability, ensuring that it can withstand the rigors of demanding industrial and consumer applications.

For detailed specifications, application notes, and additional resources, designers and engineers should consult the official datasheet provided by ON Semiconductor. The MJE200G is a reliable choice for those seeking a high-performance NPN transistor for their power switching needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8374 $58.6180
170+ $0.6872 $116.8240
265+ $0.6653 $176.3045
360+ $0.6445 $232.0200
465+ $0.6225 $289.4625
620+ $0.5590 $346.5800
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Availability: 973 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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