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MJH11020G

Part No MJH11020G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans Darlington NPN 200V 15A 150000mW 3-Pin(3+Tab) TO-247 Tube / TRANS NPN DARL 200V 15A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 200V
Vce Saturation (Maximum) @ Ib, Ic 4V @ 150mA, 15A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 400 @ 10A, 5V
Power - Max 150W
Frequency - Transition 3MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 788858-MJH11020G
Popularity Medium
Supply and Demand Status Limited
Family Name MJH11020
Introduction Date October 01, 1996
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian MJH11020G CAD Model

Description

ON Semiconductor MJH11020G Silicon NPN Transistor

The ON Semiconductor MJH11020G is a high-performance silicon NPN transistor designed to meet the rigorous demands of high-power switching applications. This powerful semiconductor device is capable of handling significant voltage and current, making it an ideal choice for a wide range of electronic circuits. The MJH11020G is well-suited for use in power amplifiers, switching regulators, motor controls, and other high-power applications.

Featuring a collector-emitter voltage (VCEO) of 350V and a collector current (IC) of 20A, the MJH11020G transistor can efficiently manage high power levels. Its power dissipation is rated at 200W, ensuring that it can sustain a considerable amount of energy without overheating. The transistor comes in a robust and reliable package, which is essential for maintaining performance and longevity in challenging conditions.

The MJH11020G boasts a high DC current gain (hFE), which provides excellent amplification characteristics for the transistor. This makes it highly effective for use in power amplification stages, where signal strength is crucial. Additionally, the device features a fast switching speed, enabling quick transitions between on and off states, which is beneficial for applications that require high-speed switching such as inverters and converters.

ON Semiconductor has designed the MJH11020G with a focus on reliability and durability. The device is constructed to withstand high temperatures and is equipped with built-in features to protect against overcurrent and thermal overload. This ensures that it can operate reliably over extended periods, even under stressful conditions.

For engineers and designers looking for a high-power NPN transistor that offers both performance and reliability, the MJH11020G from ON Semiconductor is an excellent choice. Its robust design, combined with its impressive electrical characteristics, makes it a versatile component that can be used in a variety of demanding applications.

Whether you're building power supplies, designing audio amplifiers, or developing sophisticated control systems, the MJH11020G provides the power and performance you need to drive your projects forward.

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