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MJW3281A

Part No MJW3281A
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary NPN-PNP Silicon Power Bipolar Transistors | TRANS NPN 230V 15A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 230V
Vce Saturation (Maximum) at Ib, Ic 2V at 1A, 10A
Current - Collector Cutoff (Maximum) 50μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 50 at 7A, 5V
Maximum Power 200W
Frequency - Transition 30MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1223814-MJW3281A
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MJW3281A CAD Model

Description

Introducing the MJW3281A Power Transistor from ON Semiconductor

The MJW3281A, crafted with precision by ON Semiconductor, stands as a testament to the company's commitment to delivering high-performance and reliable power solutions. This NPN silicon power transistor is specifically designed to cater to audio power amplifier applications, ensuring that it meets the rigorous demands of high fidelity and quality sound reproduction.

With its exceptional features, the MJW3281A is engineered for a maximum collector-base voltage (VCBO) of 250V, a maximum collector-emitter voltage (VCEO) of 250V, and a collector current (IC) of up to 15A. These specifications ensure that the device can handle significant voltage levels and currents without compromising its performance or longevity.

The device boasts a high power dissipation capability of 150W, which is a clear indication of its ability to manage thermal conditions efficiently. This is crucial for maintaining stability and performance in applications that require continuous operation under high power conditions. The MJW3281A also features a high DC current gain (hFE), which ranges from 30 to 240 at IC = 8A, providing a robust and consistent amplification factor that is vital for audio applications.

ON Semiconductor has designed the MJW3281A with a TO-247 package, which is renowned for its excellent power handling and heat dissipation characteristics. This package design ensures that the device can be easily integrated into a wide range of audio amplifier designs while maintaining a compact footprint.

Moreover, the MJW3281A is complemented by its PNP counterpart, the MJW1302A, allowing designers to create complementary symmetry designs that are often preferred for their balanced performance and reduced distortion in audio applications.

Overall, the MJW3281A from ON Semiconductor is a robust and reliable choice for designers looking to enhance audio power amplifiers with a transistor that offers high power, efficiency, and performance. Its ability to operate under high voltages and currents, combined with its excellent thermal properties and complementary PNP pairing, makes it a versatile and effective component in the realm of high-fidelity audio systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6515 $52.1200
165+ $0.6103 $100.6995
255+ $0.5897 $150.3735
365+ $0.5484 $200.1660
475+ $0.5278 $250.7050
595+ $0.5072 $301.7840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,200 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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