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MMBT2222AWT1

Part No MMBT2222AWT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A SOT323 / General Purpose Transistor
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Part Status Obsolete (End Of Life)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 300mV at 15mA, 150mA
DC Current Gain (hFE) (Min) at Ic, Vce 100 at 150mA, 10V
Power - Max 150mW
Frequency - Transition 300MHz
Mounting Style SMD
Manufacturer Package SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Part Number Series MMBT2222A
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804363-MMBT2222AWT1
Ultra Librarian 3D Model Ultra Librarian MMBT2222AWT1 CAD Model

Description

Product Overview: MMBT2222AWT1 from ON Semiconductor

The MMBT2222AWT1 is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed to offer a blend of efficiency and reliability for a variety of electronic applications. This versatile transistor is a surface-mount device, encapsulated in a small SOT-323 package, which makes it ideal for space-constrained applications where board real estate is at a premium.

Key Features

  • Transistor Type: NPN - This allows the MMBT2222AWT1 to be used in general-purpose amplification and switching applications.
  • Current Rating: The transistor can handle a continuous collector current of up to 600 mA, making it suitable for moderate power applications.
  • Voltage Ratings: It has a collector-emitter voltage (VCEO) of 40V, a collector-base voltage (VCBO) of 75V, and an emitter-base voltage (VEBO) of 6V.
  • High Gain Bandwidth Product: With a transition frequency (fT) of 300 MHz, the MMBT2222AWT1 is capable of operating at high frequencies, which is beneficial for RF and high-speed switching applications.
  • Low Saturation Voltage: The device exhibits low VCE(sat) and VBE(sat) which ensures lower power dissipation during operation.
  • Power Dissipation: With a power dissipation of 225 mW, it can withstand moderate thermal environments without the need for additional heat sinking.

Applications

The MMBT2222AWT1 is widely used in a variety of applications due to its robust performance characteristics. It is often found in:

  • Load switches
  • Power management circuits
  • Signal amplification
  • Motor control circuits
  • Audio amplifiers
  • Driver modules for relays and LEDs
  • Portable devices
  • Telecommunication circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMBT2222AWT1 is no exception. This product is manufactured to meet the stringent requirements of the electronics industry, ensuring high reliability and performance. Furthermore, it is designed to meet or exceed the environmental compliance standards, making it a suitable choice for eco-conscious applications.

In conclusion, the MMBT2222AWT1 from ON Semiconductor is a compact, high-performance NPN transistor that offers a balance of power handling, efficiency, and versatility, suitable for a wide range of electronic circuits and applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,800+ $0.0278 $50.0400
3,835+ $0.0261 $100.0935
5,955+ $0.0252 $150.0660
8,515+ $0.0235 $200.1025
11,065+ $0.0226 $250.0690
13,825+ $0.0217 $300.0025
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 270,691 pieces
MOQ: 1800 pcs
Order Increment : 1 pcs
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