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MMBT2369ALT1G

Part No MMBT2369ALT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 15V 0.2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Max Vce (sat) 500mV @ 10mA, 100mA
Collector Cut-off Current(Max) 400nA
Typical Gain (hFE) (Min) 20 @ 100mA, 1V
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 114128-MMBT2369ALT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Family Name MMBT2369AL
Introduction Date May 31, 1996
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian MMBT2369ALT1G CAD Model

Description

ON Semiconductor MMBT2369ALT1G NPN Transistor

The MMBT2369ALT1G from ON Semiconductor is a high-performance NPN transistor designed for use in a wide range of electronic applications. This small-signal transistor is particularly suited for amplification and switching applications where space is at a premium. Its SOT-23 package is ideal for automated surface mount assembly and is widely used in commercial and industrial electronic devices.

Key Features

  • Transistor Type: NPN - This allows for high-speed switching and amplification with a positive current flow from the collector to the emitter.
  • Voltage - Collector Emitter Breakdown (Max): 15V - The transistor can handle a maximum of 15V across the collector-emitter junction, making it suitable for a range of low-voltage applications.
  • Current - Collector (Ic) (Max): 200mA - It can support a collector current up to 200mA, sufficient for various signal processing tasks.
  • Power - Max: 225mW - It has a maximum power dissipation of 225 milliwatts, ensuring it can handle moderate power levels in a compact form factor.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V - This specifies the transistor's ability to amplify the input signal at a given collector current and collector-emitter voltage.
  • Frequency - Transition: 250MHz - The high transition frequency makes this transistor suitable for applications that require fast switching times.
  • Operating Temperature: -55°C to +150°C - The device is designed to operate over a wide temperature range, ensuring reliability in various environmental conditions.
  • Mounting Type: Surface Mount - The SOT-23 package allows for efficient use of PCB space and compatibility with modern automated assembly processes.

Applications

The MMBT2369ALT1G is versatile and can be used in a variety of circuits, including:

  • Signal amplification circuits
  • Switching applications
  • Audio amplifiers
  • Driver stages in hi-fi systems
  • Telecommunication devices
  • Computing equipment

With its impressive specifications and compact size, the MMBT2369ALT1G is an excellent choice for designers looking to optimize their circuit designs for performance and space efficiency. ON Semiconductor's commitment to quality ensures that this transistor will deliver consistent and reliable performance for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,670+ $0.0300 $50.1000
4,070+ $0.0246 $100.1220
6,280+ $0.0239 $150.0920
8,660+ $0.0231 $200.0460
11,215+ $0.0223 $250.0945
15,000+ $0.0200 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 396,590 pieces
MOQ: 1670 pcs
Order Increment : 1 pcs
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