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MMBT2484LT1G

Part No MMBT2484LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 0.1A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 350mV @ 100μA, 1mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 1mA, 5V
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023738-MMBT2484LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MMBT2484LT1G CAD Model

Description

The MMBT2484LT1G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for use in a wide range of electronic applications. This versatile transistor is known for its low voltage operation and high current capability, making it an ideal choice for switching and amplification purposes in compact electronic devices.

Key Features

  • Transistor Polarity: NPN - This allows for effective current amplification when used in common emitter configurations.
  • Collector-Emitter Voltage (Vceo): 40V - Provides a good balance between breakdown voltage and minimal power dissipation, suitable for a variety of circuits.
  • Collector Current (Ic): 800mA - High current handling capability for driving larger loads or for power amplification.
  • DC Current Gain (hFE): 100 to 300 - Ensures efficient current gain, which is critical for amplification purposes in electronic circuits.
  • Power Dissipation (Pd): 350mW - Adequate for low to medium power applications, allowing for efficient operation without excessive heat generation.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - Offers durability and reliability across a wide range of environmental conditions.
  • Package / Case: SOT-23-3 - A small and surface-mountable package that saves space on PCBs and is suitable for automated assembly processes.

Applications

The MMBT2484LT1G transistor is commonly used in:

  • Switching and linear amplification
  • Power management circuits
  • Signal processing
  • Driver stages in audio amplifiers
  • Control systems
  • Portable and consumer electronics

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMBT2484LT1G is no exception. It is manufactured to meet stringent industry standards, ensuring high reliability and performance under varying conditions. The device is RoHS compliant and is designed with green molding compound, reflecting ON Semiconductor's dedication to environmental sustainability.

Conclusion

The MMBT2484LT1G from ON Semiconductor is a robust and efficient NPN transistor that offers designers a compact solution for a multitude of electronic applications. With its high current capability, low voltage operation, and space-saving SOT-23 package, it is an excellent choice for modern electronic circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
885+ $0.0565 $50.0025
2,160+ $0.0463 $100.0080
3,345+ $0.0449 $150.1905
4,610+ $0.0434 $200.0740
5,955+ $0.0420 $250.1100
7,960+ $0.0377 $300.0920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 123,000 pieces
MOQ: 885 pcs
Order Increment : 1 pcs
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