ON Semiconductor MMBT3906WT1G PNP Transistor

The ON Semiconductor MMBT3906WT1G is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This versatile transistor is a popular choice among electronic enthusiasts and professionals alike due to its reliable performance and compact SOT-323 surface mount package.

Key Features

• Type: PNP
• Package: SOT-323 (SC-70)
• Collector-Emitter Voltage (Vceo): 40V
• Collector-Base Voltage (Vcbo): 40V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 200 mA
• Power Dissipation (Pd): 225 mW
• DC Current Gain (hFE): 100 to 300
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The MMBT3906WT1G is engineered to offer excellent current gain characteristics with a DC current gain (hFE) range of 100 to 300, making it suitable for a wide array of applications. Its maximum collector current of 200 mA ensures it can handle moderate current loads effectively.

One of the significant advantages of the MMBT3906WT1G is its small SOT-323 package, which allows it to be used in space-constrained applications without sacrificing performance. The device's robust construction ensures reliability and a long operational lifespan, with an operating and storage temperature range of -55°C to +150°C.

With its ability to handle a collector-emitter voltage of up to 40V and power dissipation of 225 mW, the MMBT3906WT1G is an excellent choice for a variety of circuits. Whether for use in amplification, switching, or as a component in digital logic circuits, this transistor's performance is trusted by industry professionals.

ON Semiconductor's commitment to quality means that the MMBT3906WT1G is manufactured to the highest standards, ensuring consistent performance and reliability for your electronic projects. Whether you're designing a new circuit or replacing a component in an existing one, the MMBT3906WT1G is a dependable and efficient solution.