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MMBT9012LT1G

Part No MMBT9012LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 322748-MMBT9012LT1G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBT9012LT1G CAD Model

Description

ON Semiconductor MMBT9012LT1G Bipolar Transistor

The MMBT9012LT1G is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in the semiconductor industry. This compact surface-mount transistor is part of ON Semiconductor's extensive range of discrete semiconductor products and is widely used in various electronic applications due to its efficiency and reliability.

The MMBT9012LT1G features a collector-emitter voltage (VCEO) of -25V and collector current (IC) of -500mA, making it suitable for moderate power switching and amplification tasks. Its high current gain (hFE) ensures effective amplification of signals, which is critical in audio amplifiers, signal processing, and other low-power applications.

This transistor is housed in an SOT-23 package, known for its small footprint and exceptional thermal performance. The compact size makes it an ideal choice for space-constrained applications, allowing designers to save valuable board space without compromising on performance. Additionally, the SOT-23 package enhances the thermal dissipation characteristics of the device, contributing to its overall stability and longevity.

ON Semiconductor has designed the MMBT9012LT1G with a focus on energy efficiency. The device boasts low collector-emitter saturation voltage (VCE(sat)), which minimizes power loss during operation and contributes to the energy efficiency of the end application. This feature, along with its fast switching speeds, makes the MMBT9012LT1G an excellent choice for power management in portable devices, where battery life is critical.

The MMBT9012LT1G is also characterized by its robustness and reliability. It can operate over a wide temperature range, ensuring consistent performance even under varying environmental conditions. The device is also compliant with RoHS regulations, making it an environmentally friendly option for manufacturers looking to create green products.

In summary, the ON Semiconductor MMBT9012LT1G PNP bipolar transistor is a versatile component suitable for a wide range of applications. Its compact size, energy efficiency, and reliable performance make it a go-to choice for designers and engineers seeking to develop high-quality electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,085+ $0.0277 $57.7545
5,000+ $0.0231 $115.5000
7,895+ $0.0219 $172.9005
11,115+ $0.0208 $231.1920
13,890+ $0.0208 $288.9120
18,750+ $0.0185 $346.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,765 pieces
MOQ: 2085 pcs
Order Increment : 1 pcs
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