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MMDF2P02HDR2

Part No MMDF2P02HDR2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.3A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.3A
Maximum Rds On at Id,Vgs 160 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 588pF @ 16V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 134559-MMDF2P02HDR2
Ultra Librarian 3D Model Ultra Librarian MMDF2P02HDR2 CAD Model

Description

ON Semiconductor MMDF2P02HDR2 P-Channel Power MOSFET

The ON Semiconductor MMDF2P02HDR2 is a high-performance P-Channel Power MOSFET designed to deliver efficient power management and control in a wide array of electronic applications. This robust semiconductor device is ideal for switching and amplification tasks where a negative charge carrier mobility is required.

Constructed with advanced PowerTrench® technology, the MMDF2P02HDR2 offers an excellent R<sub>DS(on) (drain-source on-resistance) characteristic, which ensures minimal power loss and heat generation during operation. This feature makes it an excellent choice for power-sensitive designs, where maintaining energy efficiency is of paramount importance.

With a drain-source voltage (V<sub>DSS) of -20V and a continuous drain current (I<sub>D) of -3.7A at 25°C, this MOSFET can handle a substantial amount of power, making it suitable for a variety of high-demand applications. The device is also characterized by a low gate threshold voltage (V<sub>GS(th)), which allows for easy drive capability.

The MMDF2P02HDR2 comes in a compact SO-8 package, which is not only space-efficient but also offers excellent thermal performance. This packaging allows the device to be incorporated into a wide range of electronic equipment, including but not limited to power supply circuits, motor controls, and battery management systems.

Safety and reliability are key considerations for ON Semiconductor, and the MMDF2P02HDR2 is no exception. It features built-in ESD protection, safeguarding the device from electrostatic discharges during handling and operation. Additionally, it is compliant with the RoHS directive, making it an environmentally friendly choice for manufacturers looking to reduce hazardous substances in their products.

Whether you're designing a sophisticated power management system or looking for a reliable component for your electronic project, the ON Semiconductor MMDF2P02HDR2 P-Channel Power MOSFET is a versatile and dependable option that delivers performance and efficiency without compromise.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8025 $63.0875
80+ $1.4790 $118.3200
125+ $1.4328 $179.1000
170+ $1.3866 $235.7220
220+ $1.3404 $294.8880
290+ $1.2017 $348.4930
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Availability: 1,190 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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