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MMSF7P03HDR2

Part No MMSF7P03HDR2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 75.8nC @ 6V
Max Input Capacitance 1680pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 5.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 113285-MMSF7P03HDR2
Ultra Librarian 3D Model Ultra Librarian MMSF7P03HDR2 CAD Model

Description

ON Semiconductor MMSF7P03HDR2 Power MOSFET

The MMSF7P03HDR2 is a high-performance P-Channel Power MOSFET produced by ON Semiconductor, a leading supplier of semiconductor-based solutions. This robust component is designed for a variety of applications, including power management, load switching, and motor control in industrial, automotive, and consumer markets. Its compact form factor and energy-efficient design make it an ideal choice for space-constrained and power-sensitive applications.

Key Features

  • High Drain-Source Breakdown Voltage (V<sub>DSS): The MMSF7P03HDR2 offers a substantial breakdown voltage of -30V, providing reliable performance in circuits with high voltage requirements.
  • Low On-Resistance (R<sub>DS(on)): With an R<sub>DS(on) value as low as 70 mOhms at V<sub>GS = -10V, this MOSFET ensures minimal power loss and improved efficiency during operation.
  • High Continuous Drain Current (I<sub>D): Capable of supporting a continuous drain current of -3.4A, the device can handle significant power for a variety of applications.
  • Advanced High Cell Density Process: Utilizing ON Semiconductor's advanced high cell density process, the MMSF7P03HDR2 achieves superior performance with reduced on-state resistance and faster switching speeds.
  • Thermal Management: The device is encapsulated in a robust, surface-mount package that enhances thermal dissipation, ensuring stable operation under varying environmental conditions.

Applications

  • DC/DC Converters
  • Power Management Systems
  • Load Switching
  • Battery Powered Circuits
  • Motor Control Modules

The MMSF7P03HDR2's combination of high breakdown voltage, low on-resistance, and high current handling capability makes it a versatile component that enhances the performance of power-sensitive designs. Its reliability and efficiency are backed by ON Semiconductor's commitment to quality, making it a solid choice for engineers looking to optimize their power management solutions.

Whether you're designing a sophisticated industrial system or a simple consumer electronic device, the MMSF7P03HDR2 Power MOSFET from ON Semiconductor is engineered to meet the demands of your application with superior performance and energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5616 $58.9680
255+ $0.4608 $117.5040
390+ $0.4464 $174.0960
535+ $0.4320 $231.1200
695+ $0.4176 $290.2320
930+ $0.3745 $348.2850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 210 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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