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MUN5211DW1T1

Part No MUN5211DW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363 / Dual Bias Resistor Trasnsistors
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Part Status Obsolete (End Of Life)
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) at Ic, Vce 35 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 300μA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 250mW
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Part Number Series MUN52**DW1T
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809536-MUN5211DW1T1
Ultra Librarian 3D Model Ultra Librarian MUN5211DW1T1 CAD Model

Description

ON Semiconductor MUN5211DW1T1 Dual Pre-Biased Transistor

The MUN5211DW1T1 is a high-performance dual pre-biased transistor manufactured by ON Semiconductor, a trusted leader in the semiconductor industry. This product is designed to offer a compact and efficient solution for a variety of electronic applications. It features two NPN transistors in a single SOT-363 package, making it an ideal choice for space-constrained designs.

Each transistor in the MUN5211DW1T1 is pre-biased, which means that it has built-in resistors to ensure proper operation without the need for external components. This integrated design simplifies circuit layout and reduces component count, leading to cost savings and a more reliable end product. The resistors are precisely matched, ensuring consistent performance between the two transistors.

Key specifications of the MUN5211DW1T1 include a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 100mA, and a power dissipation of 150mW per transistor. The device also boasts a high current gain bandwidth product (fT) which ensures good frequency response, making it suitable for amplification and switching applications in consumer electronics, industrial control systems, and telecommunications.

ON Semiconductor's commitment to quality is evident in the MUN5211DW1T1's robust construction. The device is built to offer high reliability and stability over a wide range of operating conditions. Its low on-voltage and minimal saturation voltage drop contribute to energy efficiency, which is critical for battery-powered devices.

For designers and engineers looking for a versatile, high-performance dual transistor solution, the MUN5211DW1T1 from ON Semiconductor is an excellent choice. Its pre-biased configuration, integration of two transistors in one package, and superior electrical characteristics make it a powerful component for modern electronic designs.

Overall, the MUN5211DW1T1 is a testament to ON Semiconductor's dedication to providing innovative, high-quality components that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,510+ $0.0332 $50.1320
3,220+ $0.0311 $100.1420
5,000+ $0.0300 $150.0000
7,170+ $0.0279 $200.0430
9,330+ $0.0268 $250.0440
11,630+ $0.0258 $300.0540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 1510 pcs
Order Increment : 1 pcs
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