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NDD04N60ZT4G

Part No NDD04N60ZT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.1A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 101637-NDD04N60ZT4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NDD04N60Z
Introduction Date June 15, 2009
ECCN EAR99
Country of Origin Malaysia, Vietnam
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NDD04N60ZT4G CAD Model

Description

Product Overview: NDD04N60ZT4G from ON Semiconductor

The NDD04N60ZT4G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This device is engineered to deliver efficient power conversion and control in a wide range of applications, making it a versatile component for modern electronic systems.

Key Features

  • High Current Capability: The NDD04N60ZT4G boasts a continuous drain current (ID) rating of 4A, which allows it to handle significant power for its size.
  • Low On-Resistance: With a low RDS(on) of typically 1.15 ohms at 10V, this MOSFET ensures minimal voltage drop and power loss during operation, enhancing overall efficiency.
  • High Voltage Threshold: The device is designed to withstand drain-to-source voltages (VDSS) up to 600V, making it suitable for high-voltage applications.
  • Fast Switching Speed: Its fast switching capability minimizes transition losses and improves performance in high-frequency power switching applications.
  • Robust Thermal Performance: The NDD04N60ZT4G comes in a TO-252 (DPAK) package, known for its excellent thermal characteristics, ensuring reliable operation even at elevated temperatures.

Applications

The NDD04N60ZT4G is ideal for a variety of applications that require efficient power management, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • DC-DC Converters
  • Motor Drives
  • Lighting Systems
  • High-Efficiency Power Management Circuits

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NDD04N60ZT4G is produced with state-of-the-art manufacturing processes and subjected to rigorous testing to ensure it meets the stringent requirements of industrial and commercial applications.

Environmental Compliance

The NDD04N60ZT4G adheres to environmental standards, including RoHS compliance, which restricts the use of certain hazardous substances in electronic equipment. This commitment to environmental stewardship makes the NDD04N60ZT4G an environmentally responsible choice for your power management solutions.

In conclusion, the NDD04N60ZT4G from ON Semiconductor is a powerful and reliable MOSFET that offers a combination of high voltage capability, low on-resistance, fast switching speed, and robust thermal performance, making it an excellent choice for a wide range of power conversion and control applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,090 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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