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NDD60N550U1T4G

Part No NDD60N550U1T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8.2A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 540pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1082829-NDD60N550U1T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDD60N550U1T4G CAD Model

Description

Introducing the NDD60N550U1T4G Power MOSFET from ON Semiconductor

ON Semiconductor's NDD60N550U1T4G is a cutting-edge power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This power device is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the ever-evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The NDD60N550U1T4G boasts an extremely low on-resistance (RDS(on)), which significantly reduces conduction losses and improves overall system efficiency. This is particularly beneficial in applications where power conservation is crucial.
  • High Current Capacity: With its ability to handle a continuous drain current (ID), this MOSFET can manage high current demands with ease, making it ideal for power-intensive operations.
  • Fast Switching Speed: The device's fast switching capabilities ensure minimal switching losses and are suitable for high-frequency circuits, contributing to the overall performance and speed of the system.
  • Enhanced Thermal Performance: The NDD60N550U1T4G is designed with an optimal thermal footprint, ensuring that the device operates within safe temperature ranges even under high power conditions.
  • Robust Package: Encased in a TO-252 (DPAK) package, the MOSFET is both durable and compact, allowing for efficient use of space on printed circuit boards (PCBs).

Applications

The versatility of the NDD60N550U1T4G makes it suitable for a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Switching regulators
  • LED lighting solutions

Quality and Reliability

ON Semiconductor ensures that the NDD60N550U1T4G meets the highest quality and reliability standards. The device has undergone rigorous testing to guarantee performance in even the most demanding conditions. With features such as a built-in ESD protection and a maximum junction temperature of 175°C, the NDD60N550U1T4G is built to last and to sustain performance over time.

Whether you're designing power management systems, industrial controls, or automotive electronics, the NDD60N550U1T4G from ON Semiconductor is a reliable and efficient choice that will help you achieve your design goals with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7007 $52.5525
175+ $0.5749 $100.6075
270+ $0.5569 $150.3630
375+ $0.5390 $202.1250
480+ $0.5210 $250.0800
645+ $0.4671 $301.2795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 194 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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