The NFAQ1060L36T is a high-performance, automotive-grade N-channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management. This product is specifically designed to meet the rigorous standards of the automotive industry, offering a combination of reliability, efficiency, and power density that is ideal for a wide range of applications.

Key Features

• Low On-Resistance: The MOSFET features an exceptionally low on-resistance of 10.8 mΩ (typical), which translates to reduced conduction losses and improved overall efficiency in application.
• High Current Capability: With a continuous drain current of 180 A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive automotive systems.
• Enhanced Thermal Performance: The NFAQ1060L36T is encapsulated in a Power56 package, which offers superior thermal performance and contributes to the device's longevity under high-temperature operating conditions.
• Automotive Grade: Meeting AEC-Q101 standards, this MOSFET is guaranteed for automotive applications, ensuring reliability and performance under the harsh conditions typical of automotive environments.
• Low Gate Charge: A low gate charge ensures that the MOSFET can switch on and off efficiently, which is critical for reducing switching losses and improving power efficiency in high-frequency operations.

Applications

The NFAQ1060L36T is ideally suited for a range of automotive applications, including:

• Powertrain systems
• Electric power steering
• DC/DC converters
• Motor drives

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 100 V Continuous Drain Current (I<sub>D) 180 A Power Dissipation (P<sub>D) 125 W Operating Temperature Range -55°C to +175°C Package Power56

With its robust design and outstanding performance characteristics, the NFAQ1060L36T from ON Semiconductor is an excellent choice for designers seeking a reliable MOSFET for their automotive applications.