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NJVMJD117T4G

Part No NJVMJD117T4G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP DARL 100V 2A DPAK / Bipolar (BJT) Transistor PNP - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel (TR)
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75 W
Frequency - Transition 25MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD117
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNJVMJD117T4G,2156-NJVMJD117T4G-OS
Standard Package 2,500
Win Source Part Number 968604-NJVMJD117T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD117T4G CAD Model

Description

ON Semiconductor NJVMJD117T4G Overview

The NJVMJD117T4G from ON Semiconductor is a high-performance NPN bipolar power transistor designed for general-purpose amplifier and switching applications. This robust component is housed in a durable DPAK package, ensuring reliable operation even under challenging conditions. The NJVMJD117T4G is a versatile transistor that combines efficiency with high current handling capabilities, making it an ideal choice for a wide range of electronic circuits.

Key Features

  • High Collector-Emitter Breakdown Voltage: The NJVMJD117T4G boasts a high VCEO of 100V, providing ample voltage headroom for various applications.
  • High Current Rating: With a continuous collector current (IC) rating of up to 2A, this transistor can handle significant power for its size.
  • Low Collector-Emitter Saturation Voltage: This feature ensures efficient operation with minimal voltage drops across the transistor, leading to reduced power dissipation.
  • Fast Switching Speeds: The device's swift response times make it suitable for high-frequency applications.
  • Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a matching part for easy implementation in push-pull configurations.

Applications

The NJVMJD117T4G is well-suited for a variety of applications, including:

  • Power management circuits
  • Linear amplifiers
  • Switching regulators
  • Motor control drivers
  • Relay drivers

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NJVMJD117T4G is no exception. This transistor is built to meet stringent industry standards, ensuring high reliability and performance consistency. The component also features a robust thermal management design, allowing it to maintain stability over a wide range of operating temperatures.

Environmental Compliance

In line with modern environmental standards, the NJVMJD117T4G is a Pb-free and RoHS compliant product. This reflects ON Semiconductor's dedication to reducing the environmental impact of its products and meeting the requirements of eco-conscious customers and regulations.

Overall, the NJVMJD117T4G from ON Semiconductor is a powerful solution for designers looking for a reliable and efficient NPN transistor for their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2041 $50.0045
600+ $0.1675 $100.5000
925+ $0.1623 $150.1275
1,275+ $0.1570 $200.1750
1,650+ $0.1518 $250.4700
2,205+ $0.1361 $300.1005
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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