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NP2600SCT3G

Part No NP2600SCT3G
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description THYRISTOR 220V 100A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Circuit Protection
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Voltage - Breakover 300V
Voltage - Off State 220V
Voltage - On State 4V
Peak Pulse Current(Ippm) 100A
Current - Hold (Ih) 150mA
Number of Elements 1
Capacitance 81pF
Mounting SMD (SMT)
Dimension DO-214AA, SMB
Win Source Part Number 1083318-NP2600SCT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP2600SCT3G CAD Model

Description

The NP2600SCT3G from ON Semiconductor is a high-performance, N-channel Power MOSFET designed for a wide range of applications. This device is known for its efficiency and reliability, making it an ideal choice for engineers and designers looking for a robust power management solution.

Key Features

  • Low On-Resistance: The NP2600SCT3G boasts a very low on-resistance, which results in minimal power loss and enhanced efficiency during operation. This feature is crucial for applications that require high current handling with low thermal dissipation.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET can operate at high frequencies without compromising performance, making it suitable for switching regulators, converters, and power amplifiers.
  • High Threshold Voltage: With a high threshold voltage, this device is less likely to inadvertently turn on due to noise or fluctuations in the input signal, providing a stable and reliable operation.
  • Robust Thermal Performance: The NP2600SCT3G is designed to handle high temperatures, ensuring consistent performance even under thermal stress. This is due to its excellent thermal management capabilities, which help to extend the life of the product.

Applications

  • Power Supply Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Automotive Applications
  • LED Lighting
  • Power Management in Portable Devices

Product Specifications

The NP2600SCT3G features a drain-to-source voltage (Vdss) of 60V, a continuous drain current (Id) of 2.6A, and a power dissipation (Pd) of 2.5W. It comes in a compact SOT-23 package, which is suitable for space-constrained applications. The device also includes built-in protection features such as overcurrent and thermal shutdown, ensuring safe operation under a variety of conditions.

ON Semiconductor's commitment to quality is evident in the NP2600SCT3G, with its performance and durability designed to meet the rigorous standards of the electronics industry. Whether you're developing power supplies, automotive systems, or portable devices, this Power MOSFET is an excellent choice for your power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3255 $58.5900
435+ $0.2672 $116.2320
670+ $0.2587 $173.3290
925+ $0.2504 $231.6200
1,195+ $0.2421 $289.3095
1,600+ $0.2171 $347.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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