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NST3946DP6T5G

Part No NST3946DP6T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 0.2A SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 350mW
Frequency - Transition 200MHz, 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 025733-NST3946DP6T5G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NST3946DP6T5G CAD Model

Description

The ON Semiconductor NST3946DP6T5G is a cutting-edge dual P-Channel MOSFET designed to deliver high performance and efficiency for a wide range of applications. This product is part of ON Semiconductor's portfolio of power management devices, renowned for their reliability and innovative technology.

With a compact SOT-963 package, the NST3946DP6T5G is optimized for space-constrained applications. It features two independent P-Channel MOSFETs with a common drain, which makes it ideal for applications requiring a bidirectional switch or a half-bridge configuration. This design not only saves space on the PCB but also simplifies the circuit design by reducing the number of components required.

The device boasts a low on-resistance of 300 mΩ at V<sub>GS = -4.5 V, which translates to reduced power loss and improved efficiency in operation. This characteristic is particularly beneficial in power management circuits, where energy conservation is paramount. Additionally, the MOSFET's low threshold voltage ensures that it can be driven at lower gate voltages, broadening its compatibility with various control circuits and logic levels.

The NST3946DP6T5G is also characterized by its robustness, with a maximum continuous drain current of -0.46 A. This allows the device to handle significant current loads without compromising performance. Furthermore, the MOSFET is designed to withstand electrostatic discharge (ESD) events, providing an ESD protection level of 2 kV, which helps to safeguard the device during handling and operation.

Applications for the NST3946DP6T5G are diverse and include load switching, power management in portable devices, battery management systems, and other low-voltage, high-efficiency requirements. Its compact design, combined with ON Semiconductor's commitment to quality, makes the NST3946DP6T5G an excellent choice for designers looking to optimize their power management solutions.

In summary, the ON Semiconductor NST3946DP6T5G is a versatile, high-performance dual P-Channel MOSFET that offers designers a space-saving, efficient, and reliable component for their power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1329 $50.5020
805+ $0.1244 $100.1420
1,250+ $0.1201 $150.1250
1,795+ $0.1115 $200.1425
2,335+ $0.1072 $250.3120
2,920+ $0.1029 $300.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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