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NSVBCP69T1G

Part No NSVBCP69T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 1A SOT223 / PNP Silicon Epitaxial Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
Transistor Type PNP
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 20V
Vce Saturation (Maximum) at Ib, Ic 500mV at 100mA, 1A
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Min) at Ic, Vce 85 at 500mA, 1V
Power - Max 1.5W
Frequency - Transition 60MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261)
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800560-NSVBCP69T1G
Ultra Librarian 3D Model Ultra Librarian NSVBCP69T1G CAD Model

Description

Product Overview: NSVBCP69T1G - ON Semiconductor

The NSVBCP69T1G is a cutting-edge PNP Bipolar Transistor crafted by the renowned manufacturer ON Semiconductor, known for their commitment to innovation and quality in the semiconductor industry. This high-performance transistor is designed to meet the rigorous demands of modern electronic circuits, providing a reliable and efficient solution for a wide range of applications.

Key Features:

  • Transistor Polarity: PNP - This transistor uses a PNP configuration, which is ideal for use in positive-ground circuits and as a switch in various electronic devices.
  • Collector-Emitter Voltage (VCEO): The NSVBCP69T1G can withstand a maximum voltage of 20V between the collector and emitter without breakdown, ensuring stable operation under typical circuit conditions.
  • Collector Current (IC): It supports a continuous collector current of up to 1A, making it suitable for driving moderate loads in your electronic designs.
  • Power Dissipation: With a power dissipation capability of 1.5W, this transistor can handle a significant amount of energy without overheating, contributing to the longevity of your application.
  • DC Current Gain (hFE): It boasts a high DC current gain, ensuring efficient current amplification in analog signal processing and power management tasks.
  • Operating Temperature Range: The device operates effectively within a temperature range of -55°C to +150°C, providing consistent performance across a broad spectrum of environmental conditions.
  • Package: Enclosed in a SOT-223 surface-mount package, the NSVBCP69T1G is optimized for compact PCB layouts and automated assembly processes, making it an excellent choice for space-constrained applications.

Applications:

The versatile NSVBCP69T1G transistor is suitable for a multitude of applications, including but not limited to, power management, load switching, signal amplification, and voltage regulation in consumer electronics, automotive systems, industrial controls, and telecommunication devices. Its robust design and reliable performance make it an essential component in any electronic circuit requiring a high-quality PNP transistor.

Quality and Environmental Compliance:

ON Semiconductor ensures that the NSVBCP69T1G meets stringent quality standards and is compliant with RoHS directives, making it an environmentally friendly choice for manufacturers looking to minimize their ecological footprint while maintaining high-quality electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1565 $50.0800
780+ $0.1285 $100.2300
1,210+ $0.1244 $150.5240
1,665+ $0.1204 $200.4660
2,150+ $0.1164 $250.2600
2,875+ $0.1044 $300.1500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 241,000 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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