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NSVMMUN2233LT3G

Part No NSVMMUN2233LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.246W SOT23 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer onsemi
Packaging Reel - TR
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting Surface Mount
Case / Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number NSVMMUN2233
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number NSVMMUN2233LT3G-ND,488-NSVMMUN2233LT3GDKR,488-NSVMMUN2233LT3GCT,488-NSVMMUN2233LT3GTR
Standard Package 10,000
Win Source Part Number 1325066-NSVMMUN2233LT3G
Ultra Librarian 3D Model Ultra Librarian NSVMMUN2233LT3G CAD Model

Description

ON Semiconductor NSVMMUN2233LT3G Product Overview

The NSVMMUN2233LT3G is a high-performance, dual N-channel Small Signal MOSFET from ON Semiconductor, one of the leading manufacturers in the semiconductor industry. This product is designed to deliver efficient power management and signal processing in a compact package, making it ideal for a wide range of applications, including portable devices, power management circuits, and various types of switching applications.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be driven by low-voltage control signals, which is particularly useful in battery-operated devices.
  • High Current Capacity: With the ability to handle a substantial continuous drain current, the NSVMMUN2233LT3G is suitable for high-performance applications.
  • Low On-Resistance: The low on-resistance (R<sub>DS(on)) minimizes power loss and heat generation, enhancing the overall efficiency of the circuit.
  • SOT-23 Package: Its small surface mount SOT-23 package allows for a compact footprint on printed circuit boards, which is critical for space-constrained applications.
  • Robust Thermal Performance: The device's thermal characteristics ensure reliable operation even under conditions of high ambient temperature or high power dissipation.

Applications

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Systems
  • Load/Power Switching
  • Signal Processing

The NSVMMUN2233LT3G is manufactured with ON Semiconductor's advanced technology, which guarantees high reliability and performance. The device also features low power consumption, contributing to the extended battery life of portable devices. Its dual N-channel configuration allows for flexibility in design, including the possibility to control two separate circuits or to configure them in a complementary push-pull arrangement for more complex applications.

ON Semiconductor's commitment to quality ensures that the NSVMMUN2233LT3G meets the stringent requirements of the electronics industry, making it a smart choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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