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NTB004N10G

Part No NTB004N10G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 201A TO263  /  N-Channel 100 V 201A (Ta) 340W (Tc) Surface Mount D²PAK-3 (TO-263-3)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 201A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11900 pF @ 50 V
Power Dissipation (Max) 340W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D²PAK-3 (TO-263-3)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number NTB004
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NTB004N10GTR,488-NTB004N10GDKR,488-NTB004N10GCT
Standard Package 800
Win Source Part Number 960690-NTB004N10G
Ultra Librarian 3D Model Ultra Librarian NTB004N10G CAD Model

Description

The NTB004N10G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This power MOSFET is a state-of-the-art semiconductor device that is widely used in a variety of applications, including power management, automotive, industrial, and consumer electronics.

With a drain-to-source voltage (V<sub>DS) of 100V, the NTB004N10G is capable of handling high voltage operations while maintaining a low on-resistance (R<sub>DS(on)). This feature ensures high efficiency and minimizes power losses during operation, making it an ideal choice for high-performance power conversion and switching applications.

The device boasts a continuous drain current (I<sub>D) of 235A at 25°C, which demonstrates its ability to support high current demands. Furthermore, the NTB004N10G features a low gate charge (Q<sub>G) and low capacitances, which contribute to its fast switching performance. This is particularly beneficial in applications where switching speed is critical, such as in DC-DC converters and motor drives.

This MOSFET also incorporates advanced trench technology, which enhances its thermal performance and reliability. The NTB004N10G can operate over a wide temperature range, ensuring stability and longevity in harsh environments. Its robust design also includes an integrated diode, which provides protection against reverse voltage, adding to the device's overall durability.

ON Semiconductor's commitment to environmental sustainability is reflected in the NTB004N10G's compliance with RoHS regulations, ensuring that no hazardous substances are used in its construction. The device is also halogen-free, further reducing its environmental impact.

Overall, the NTB004N10G from ON Semiconductor is a versatile and efficient power MOSFET that meets the rigorous demands of modern electronic circuits. Its high current capability, fast switching speeds, and thermal reliability make it a top choice for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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