The ON Semiconductor NTB90N02T4 is a high-performance, N-Channel Power MOSFET designed to deliver efficient power management and conversion in a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are engineered to reduce power losses, improve system reliability, and achieve higher power density.

Key Features

• High Drain-Source Voltage (V<sub>DS): The NTB90N02T4 is capable of supporting a drain-source voltage of up to 24V, making it suitable for high-voltage applications.
• Low On-Resistance (R<sub>DS(on)): With an extremely low on-resistance of just 2.5mΩ at V<sub>GS = 10V, this MOSFET ensures minimal power loss during operation, which enhances overall efficiency.
• High Continuous Drain Current (I<sub>D): It can handle a continuous drain current of up to 98A, providing robust power handling capability.
• Fast Switching Speed: The device's fast switching speed translates to reduced switching losses, which is crucial for high-frequency power switching applications.
• Low Gate Charge (Q<sub>g): This MOSFET has a low gate charge, which reduces the energy required to turn the transistor on and off, further improving the power efficiency.
• Temperature Resilience: The NTB90N02T4 is designed to perform reliably over a wide temperature range, ensuring stable operation under varying environmental conditions.

Applications

The ON Semiconductor NTB90N02T4 is versatile and can be used in various applications, including:

• DC/DC Converters
• Power Management for Computer Servers
• Motor Drives
• Automotive Applications
• Synchronous Rectification
• Power Supplies for Consumer Electronics

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The NTB90N02T4 is no exception and is manufactured to meet the highest industry standards. Its robust design ensures long-term reliability, making it a preferred choice for engineers and designers looking for a dependable power MOSFET solution.