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NTBG020N120SC1

Part No NTBG020N120SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 8.6A/98A D2PAK / N-Channel 1200 V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
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Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 8.6A, 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 2943 pF @ 800 V
Power Dissipation (Max) 3.7W, 468W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package D2PAK-7
Case / Package TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number NTBG020
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NTBG020N120SC1CT,488-NTBG020N120SC1DKR,488-NTBG020N120SC1TR
Standard Package 800
Win Source Part Number 1324748-NTBG020N120SC1
Ultra Librarian 3D Model Ultra Librarian NTBG020N120SC1 CAD Model

Description

The NTBG020N120SC1 is a state-of-the-art Silicon Carbide (SiC) Power MOSFET presented by ON Semiconductor, a preeminent company in energy-efficient innovations. This MOSFET is a cutting-edge component designed for high-efficiency power conversion applications. The SiC technology provides superior switching performance and higher reliability compared to silicon-based devices.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (V<sub>DS) of 1200V, this MOSFET can handle high voltage applications, making it ideal for electric vehicle chargers, solar inverters, and other energy conversion systems.
  • Low On-Resistance: The NTBG020N120SC1 boasts an ultra-low on-resistance (R<sub>DS(on)) of just 20 mΩ, which significantly reduces conduction losses and improves overall efficiency.
  • Fast Switching Speed: Enhanced switching speed reduces switching losses and allows for higher frequency operation, which can lead to smaller and more efficient power supply designs.
  • Robustness: The inherent material properties of Silicon Carbide allow for high-temperature operation and excellent thermal performance, ensuring reliability under harsh conditions.
  • Integrated Anti-Parallel Diode: An integrated body diode with low reverse recovery charge (Q<sub>rr) further enhances the performance during switching and reduces losses.

Applications

The NTBG020N120SC1 is designed for a wide range of applications where efficiency and power density are critical. Its applications include but are not limited to:

  • Power supplies for servers, telecom, and industrial use
  • Electric vehicle (EV) charging stations
  • Photovoltaic (solar) inverters
  • Uninterruptible power supplies (UPS)
  • Energy storage systems
  • Induction heating systems

Conclusion

ON Semiconductor's NTBG020N120SC1 Silicon Carbide Power MOSFET is an exemplary component for designers looking to enhance the performance and efficiency of their power conversion systems. With its superior electrical characteristics and robustness, it stands as a pivotal solution for a new era of energy-efficient applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $44.1746 $88.3492
3+ $36.2458 $108.7374
5+ $35.1131 $175.5655
6+ $33.9804 $203.8824
8+ $32.8478 $262.7824
11+ $29.4497 $323.9467
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Availability: 887 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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