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NTD15N06LT4

Part No NTD15N06LT4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 48W (Tj)
Maximum Rds On at Id,Vgs 100 mOhm @ 7.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 041966-NTD15N06LT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD15N06LT4 CAD Model

Description

Product Overview: NTD15N06LT4 - ON Semiconductor

The NTD15N06LT4 is a high-performance Power MOSFET produced by ON Semiconductor, designed to meet a wide range of applications requiring efficient power management and delivery. It belongs to a family of N-channel transistors that are optimized for low threshold voltage and low on-resistance, making them ideal for high-efficiency power switching applications.

Key Features

  • Low R<sub>DS(on): The device features a low on-state resistance, which minimizes conduction losses and improves overall efficiency, especially important in power-intensive applications.
  • High Current Capability: It can handle a continuous drain current of up to 15 A, allowing it to support demanding power loads.
  • Low Threshold Voltage: The MOSFET is designed with a low gate threshold voltage, enabling it to turn on at lower voltages and making it suitable for low voltage applications.
  • Improved Ruggedness: Enhanced durability and reliability are provided by the MOSFET's ruggedized design, which can withstand harsh operating conditions.
  • Logic Level Gate Drive: The device can be driven directly from logic-level voltages, simplifying the design of control circuits.

Applications

The NTD15N06LT4 is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • Switching regulators
  • Power management for computers and peripherals

Technical Specifications

The NTD15N06LT4 boasts a drain-to-source voltage (V<sub>DSS) of 60 V, which provides a good margin for a variety of applications. The device can operate at a maximum junction temperature of 175°C, ensuring performance even under elevated temperatures. It also includes a robust body diode that can handle reverse recovery, which is beneficial in applications where inductive loads are switched.

ON Semiconductor's commitment to quality and performance is evident in the NTD15N06LT4 Power MOSFET. It is a reliable choice for designers looking to enhance efficiency and power handling in their electronic designs. The product is available in a surface-mount package, which is suitable for automated assembly processes and is ideal for compact designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5058 $58.1670
280+ $0.4151 $116.2280
435+ $0.4021 $174.9135
595+ $0.3892 $231.5740
770+ $0.3762 $289.6740
1,030+ $0.3373 $347.4190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,970 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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