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NTD20N03L27G

Part No NTD20N03L27G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 18.9nC @ 10V
Max Input Capacitance 1260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.75W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 10A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083755-NTD20N03L27G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD20N03L27G CAD Model

Description

The NTD20N03L27G is a high-performance, Power MOSFET product designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is specifically engineered to meet the demanding requirements of power electronic applications, delivering both high efficiency and reliability.

Key Features

  • Low RDS(on): This MOSFET boasts an exceptionally low on-state resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Current Capacity: With a continuous drain current of 20A, the NTD20N03L27G can handle high current loads, making it suitable for a wide range of power applications.
  • Logic Level Gate Drive: The device can be driven directly from a microcontroller or logic circuit, simplifying the drive circuitry and reducing overall system complexity.
  • High Performance Packaging: Encased in a Pb-free, RoHS compliant, and TO-252 (DPAK) package, it ensures a compact footprint and robustness for surface-mount technology (SMT) assembly processes.

Applications

The versatility of the NTD20N03L27G allows it to be used in a variety of applications, including but not limited to:

  • DC/DC converters
  • Power management systems
  • Motor drives
  • Automotive applications
  • Switching regulators

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 30V
Continuous Drain Current (ID) 20A
Power Dissipation (PD) 48W
Operating Temperature Range -55°C to 175°C

With its robust design and superior electrical characteristics, the ON Semiconductor NTD20N03L27G MOSFET is an excellent choice for designers looking to enhance system performance while maintaining energy efficiency and thermal management.

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