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NTD3055L104-1G

Part No NTD3055L104-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 48W (Tj)
Maximum Rds On at Id,Vgs 104 mOhm @ 6A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083775-NTD3055L104-1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD3055L104-1G CAD Model

Description

Product Overview: NTD3055L104-1G

The NTD3055L104-1G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is an efficient and reliable component for a wide range of power switching applications, including power supplies, converters, and motor drives.

Key Features

  • Low R<sub>DS(on): The device boasts a low on-state resistance, which translates to reduced conduction losses and improved power efficiency.
  • High Current Capability: With a continuous drain current of up to 12 A, the NTD3055L104-1G can handle significant current loads, making it suitable for high-power applications.
  • Voltage Rating: The MOSFET has a drain-to-source voltage (V<sub>DSS) rating of 60 V, providing a good balance between performance and robustness.
  • Logic Level Gate Drive: It can be driven by logic-level voltages, which simplifies the design of drive circuits and is compatible with microcontroller outputs.
  • Low Gate Charge (Q<sub>G): A lower gate charge allows for faster switching speeds, reducing switching losses and improving overall performance.
  • Temperature Performance: The NTD3055L104-1G is designed to operate effectively over a wide temperature range, ensuring reliability in various environments.

Applications

The versatility of the NTD3055L104-1G MOSFET makes it an excellent choice for a range of applications, including:

  • DC to DC converters
  • Power management systems
  • Motor control circuits
  • Automotive applications
  • Switching regulators

Package and Quality

The NTD3055L104-1G is offered in a TO-220 package, known for its robustness and excellent thermal performance. This package is widely used in commercial and industrial applications due to its ease of mounting and good heat dissipation characteristics. ON Semiconductor is committed to high standards of quality, and the NTD3055L104-1G is no exception. It is designed to meet or exceed industry standards for performance and reliability.

With its combination of efficiency, power handling, and thermal performance, the NTD3055L104-1G from ON Semiconductor stands out as a solid choice for designers looking to optimize their power circuitry.

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