ON Semiconductor NTD4806NT4G - Power MOSFET

The NTD4806NT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in the semiconductor industry. This MOSFET is designed to meet a wide range of applications, offering a perfect solution for power management challenges.

Key Features

• Low R<sub>DS(on): The device features an exceptionally low on-resistance of just 24 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved power efficiency.
• High Current Capability: With a continuous drain current of 48 A, this MOSFET can handle high current applications with ease, making it suitable for demanding power supply and motor control circuits.
• Optimized Gate Charge: The NTD4806NT4G has been optimized for a low gate charge (Q<sub>g), which minimizes switching losses and enables fast switching applications.
• Robust Thermal Performance: The device is encapsulated in a DPAK (TO-252) package, which offers excellent thermal characteristics for better heat dissipation.

Applications

The NTD4806NT4G is versatile and can be used in a variety of applications, including:

• DC/DC Converters
• Power Supply Modules
• Motor Drives
• Automotive Applications
• Switch Mode Power Supplies (SMPS)

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30 V Gate-to-Source Voltage (V<sub>GS) ±20 V Continuous Drain Current (I<sub>D) 48 A Power Dissipation (P<sub>D) 48 W

With its high efficiency, reliability, and ON Semiconductor's commitment to quality, the NTD4806NT4G Power MOSFET is an excellent choice for designers looking to enhance the performance of their power management systems.