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NTD4809NT4G

Part No NTD4809NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 11.5V
Max Input Capacitance 1456pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004163-NTD4809NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4809NT4G CAD Model

Description

Product Overview: NTD4809NT4G from ON Semiconductor

The NTD4809NT4G is a high-performance Power MOSFET produced by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is designed to meet the stringent requirements of modern electronic applications, offering a combination of low on-resistance and high switching performance. The device is part of the TrenchMOS portfolio, which utilizes advanced trench technology to deliver superior performance in power management tasks.

The NTD4809NT4G is particularly suited for applications such as DC-DC converters, motor drives, and other power management functions in automotive, industrial, and consumer markets. Its robust design ensures reliable operation even under demanding conditions, making it an ideal choice for designers looking for a power MOSFET that can handle high currents and high temperatures without compromising on efficiency.

Key Features:

  • Low On-Resistance: The device features a very low R<sub>DS(on), which minimizes conduction losses and enhances overall efficiency.
  • High Switching Performance: With fast switching speeds, the NTD4809NT4G improves performance in applications requiring high-frequency operation.
  • Power Dissipation: Capable of handling up to 48W of power dissipation, this MOSFET can manage significant power levels, making it suitable for high-power applications.
  • High Current Capability: It has a continuous drain current of 30A, ensuring that it can support applications with high current demands.
  • Thermal Management: The MOSFET is housed in a DPAK package that offers excellent thermal performance, ensuring the device remains cool during operation.
  • Environmentally Friendly: The NTD4809NT4G is RoHS compliant and free from environmentally harmful substances, aligning with global environmental regulations.

Applications:

  • DC-DC Converters
  • Power Management Modules
  • Motor Drives
  • Automotive Electronics
  • Industrial Control Systems

In summary, the NTD4809NT4G from ON Semiconductor is a robust and efficient solution for a wide range of power management applications. Its advanced technology and features ensure that it delivers the performance required for today's high-demand electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,250 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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