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NTD4857NT4G

Part No NTD4857NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 12A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 1960pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.31W (Ta), 56.6W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060615-NTD4857NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4857NT4G CAD Model

Description

The ON Semiconductor NTD4857NT4G is a high-performance Power MOSFET designed to meet a wide range of applications across various industries. This device offers a robust solution for power management challenges by combining low on-resistance with high switching speed, making it an ideal choice for efficient power conversion in modern electronic systems.

Key Features

  • Low On-Resistance: The NTD4857NT4G features an extremely low on-resistance of typically just 8.8 mΩ, which enhances its efficiency by reducing power losses during operation.
  • High Current Capability: This MOSFET can handle continuous drain currents up to 30 A, allowing it to support high-power applications with ease.
  • High Switching Speed: Fast switching speeds are inherent in this device, thanks to its advanced technology, which is crucial for reducing switching losses and improving performance in high-frequency applications.
  • Logic Level Gate Drive: The MOSFET can be driven at logic level voltages, making it compatible with modern microcontrollers and simplifying the drive circuitry.
  • Advanced Trench Technology: Utilizing ON Semiconductor's state-of-the-art trench technology, the NTD4857NT4G achieves superior performance in terms of both on-resistance and switching characteristics.

Applications

The versatility of the NTD4857NT4G allows it to be used in a broad array of applications. It is particularly well-suited for:

  • Power supply circuits
  • DC/DC converters
  • Motor control systems
  • Automotive applications
  • Switch mode power supplies (SMPS)

Package and Reliability

Encased in a compact DPAK (TO-252) package, the NTD4857NT4G is not only space-efficient but also ensures a reliable thermal performance. Its rugged design and ON Semiconductor's commitment to quality mean that this MOSFET is built to last, even under demanding conditions.

Environmental Compliance

ON Semiconductor is dedicated to environmental stewardship. The NTD4857NT4G is compliant with RoHS and Halogen-Free standards, reflecting the company's commitment to reducing the environmental impact of its products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5978 $59.7800
240+ $0.4906 $117.7440
365+ $0.4752 $173.4480
505+ $0.4598 $232.1990
650+ $0.4446 $288.9900
870+ $0.3985 $346.6950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,480 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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