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NTD4858N-35G

Part No NTD4858N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 11.2A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 19.2nC @ 4.5V
Max Input Capacitance 1563pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta), 54.5W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1083808-NTD4858N-35G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4858N-35G CAD Model

Description

ON Semiconductor NTD4858N-35G - High-Performance Power MOSFET

The NTD4858N-35G is a cutting-edge power MOSFET device from ON Semiconductor, renowned for its high efficiency and reliability in a variety of power management applications. This particular MOSFET is designed to cater to the demands of modern electronic circuits, offering a perfect blend of low on-resistance and high switching performance that is crucial for efficient power conversion.

Key Features:

  • Low On-Resistance: The NTD4858N-35G boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications. This characteristic is vital for maintaining performance while minimizing heat generation.
  • High Current Capability: Engineered to handle high currents, this MOSFET can support applications with demanding power requirements, making it an ideal choice for power supplies, DC-DC converters, and motor control circuits.
  • Fast Switching Speed: The device is optimized for fast switching, which helps in reducing switching losses and improving performance in high-frequency power switching applications.
  • Robust Thermal Performance: With its excellent thermal characteristics, the NTD4858N-35G can operate reliably even under high temperature conditions, ensuring a longer lifespan for the device and the application it serves.
  • Advanced Technology: Utilizing ON Semiconductor's latest technology, this MOSFET achieves a perfect balance between low gate charge (Q<sub>g) and low gate threshold voltage (V<sub>GS(th)), which enhances the overall performance and ease of use.

Applications:

The versatility of the NTD4858N-35G makes it suitable for a wide range of applications. It is particularly well-suited for:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Power management solutions
  • Switching regulators
  • Load switches

ON Semiconductor's NTD4858N-35G is presented in a compact and robust package, ensuring easy integration into various circuit designs without compromising on performance. Its superior specifications and adaptability make it a go-to component for engineers looking to enhance power efficiency and reliability in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4598 $59.7740
310+ $0.3774 $116.9940
475+ $0.3656 $173.6600
655+ $0.3538 $231.7390
845+ $0.3420 $288.9900
1,130+ $0.3067 $346.5710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,570 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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