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NTD4860N-35G

Part No NTD4860N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 10.4A IPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16.5nC @ 4.5V
Max Input Capacitance 1308pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.28W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1083810-NTD4860N-35G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4860N-35G CAD Model

Description

The NTD4860N-35G from ON Semiconductor is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and conversion in a wide array of electronic applications. This robust semiconductor device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the modern electronics industry.

Key Features

  • Low R<sub>DS(on): The NTD4860N-35G features a low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for high-efficiency power management designs.
  • High Continuous Drain Current (I<sub>D): With a continuous drain current of 30A, this MOSFET can handle significant power, suitable for demanding applications.
  • High Maximum Junction Temperature: The device can operate at a maximum junction temperature of 175°C, providing reliability and performance even under high-temperature conditions.
  • Logic Level Gate Drive: The MOSFET can be driven by logic-level voltages, simplifying the design of the drive circuitry and making it compatible with microcontroller outputs.

Applications

The NTD4860N-35G is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Management for Computers and Peripherals
  • Motor Drives
  • Switching Regulators
  • Power Tools
  • Battery Management Systems

Package and Reliability

Enclosed in a compact and durable IPAK package, the NTD4860N-35G is designed for surface-mount technology (SMT), allowing for efficient assembly and space-saving on printed circuit boards (PCBs). The device also meets rigorous ON Semiconductor quality standards, ensuring high reliability and performance consistency.

Environmental Compliance

ON Semiconductor is dedicated to environmental stewardship. The NTD4860N-35G is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for electronic designs.

In summary, the NTD4860N-35G MOSFET from ON Semiconductor exemplifies a blend of efficiency, reliability, and environmental consciousness, making it a top pick for designers looking to create high-performance power systems.

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