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NTD4860NT4G

Part No NTD4860NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 10.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16.5nC @ 4.5V
Max Input Capacitance 1308pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.28W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060619-NTD4860NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4860NT4G CAD Model

Description

The NTD4860NT4G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of applications, including consumer electronics, computing, automotive, industrial, and more.

Key Features

  • Low R<sub>DS(on): The device offers a very low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capacity: With a continuous drain current of 30 A, the NTD4860NT4G is capable of handling high current applications, making it suitable for power-intensive tasks.
  • Power Dissipation: It has a power dissipation of 48 W, which ensures that the device can handle significant amounts of power without overheating.
  • High Performance: The MOSFET operates at a maximum junction temperature of 175°C, allowing for stable performance under extreme conditions.
  • Gate Charge: It features an optimized gate charge to minimize switching losses, which is critical for high-speed switching applications.

Applications

The NTD4860NT4G is versatile and can be used in a variety of applications. Some of the typical applications include:

  • DC/DC converters
  • Power management for consumer electronics such as laptops and smartphones
  • Motor control circuits in automotive and industrial settings
  • Switching regulators and power amplifiers

Quality and Reliability

ON Semiconductor ensures that the NTD4860NT4G meets the highest quality and reliability standards. The device is RoHS compliant, minimizing the environmental impact by excluding hazardous substances. It also comes in a Pb-free package, which is a testament to ON Semiconductor's dedication to environmental sustainability.

Technical Specifications

Parameter Value V<sub>DS 30 V I<sub>D 30 A R<sub>DS(on) 8.7 mΩ Power Dissipation (P<sub>D) 48 W

Overall, the NTD4860NT4G is a robust and reliable component that offers energy efficiency, high current handling, and superior thermal performance, making it an excellent choice for designers seeking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0608 $53.0400
115+ $0.8704 $100.0960
180+ $0.8432 $151.7760
250+ $0.8160 $204.0000
320+ $0.7888 $252.4160
425+ $0.7072 $300.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,040 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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