The NTD4910N-35G is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient semiconductor solutions. This MOSFET is designed to meet a wide range of applications, offering a perfect balance between high efficiency and robustness for today's power electronics systems.

Key Features

• Low R<sub>DS(on): This device features a low on-resistance, which means it has a minimal voltage drop across the device when it's on and conducting current, leading to higher efficiency in your circuit.
• High Continuous Drain Current (I<sub>D): With a high continuous drain current of 30 A, it can handle significant power for a range of demanding applications.
• 35 V Maximum Drain-to-Source Voltage (V<sub>DSS): This MOSFET can tolerate up to 35 volts across the drain and source terminals, making it suitable for many intermediate voltage applications.
• Low Gate Charge (Q<sub>g): A lower gate charge allows for faster switching speeds, which is critical for high-frequency applications.
• High Performance Packaging: Packaged in a Pb-free, halogen-free/bromine-free, RoHS compliant package, the NTD4910N-35G is designed for environmentally sensitive applications.

Applications

The NTD4910N-35G is versatile and can be used in a variety of applications, including:

• Power management systems
• DC/DC converters
• Motor drives
• Computing and server applications
• Switch mode power supplies (SMPS)
• Automotive applications that require robust and efficient power control

Technical Specifications

With its robust design and energy-efficient operation, the NTD4910N-35G from ON Semiconductor is an excellent choice for designers looking to optimize their power systems without compromising on performance or reliability.