The NTD4963NT4G from ON Semiconductor is a cutting-edge Power MOSFET designed to deliver high performance in a wide range of applications. This component is part of ON Semiconductor's high-efficiency MOSFET technology, which is renowned for its low on-resistance and minimal gate charge, making it an ideal choice for power management tasks.
Key Features
- Low RDS(on): The device boasts an exceptionally low drain-to-source on-resistance, which ensures minimal voltage drop across the MOSFET when it is turned on and helps to reduce power losses during operation.
- High Current Capacity: With a continuous drain current of up to 30 A, the NTD4963NT4G is capable of handling high current loads, making it suitable for demanding applications.
- High Efficiency: The MOSFET is designed for high efficiency, which is essential for reducing heat generation and improving the reliability of the end application.
- Robust Thermal Performance: Thanks to its excellent thermal characteristics, this MOSFET can operate at higher temperatures, which is critical for applications that may experience elevated temperatures.
Applications
ON Semiconductor's NTD4963NT4G is versatile enough to be used in a variety of applications, including:
- Power supply converters
- DC-DC converters
- Motor drives
- Automotive systems
- Switching circuits
Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDSS) |
30 V |
| Continuous Drain Current (ID) |
30 A |
| Power Dissipation (PD) |
48 W |
| RDS(on) Max @ VGS = 10 V, ID = 20 A |
7.5 mΩ |
| Operating Temperature Range |
-55°C to 175°C |
The NTD4963NT4G is available in a compact surface-mount package, which allows for efficient use of PCB space. It is also RoHS compliant and Halogen-free, ensuring environmental safety and compliance with global regulations. With its robust design and high-performance characteristics, the NTD4963NT4G is an excellent choice for engineers looking to optimize their power management systems.