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NTD4970N-35G

Part No NTD4970N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 774pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.38W (Ta), 24.6W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1083828-NTD4970N-35G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD4970N-35G CAD Model

Description

ON Semiconductor NTD4970N-35G - Power MOSFET

The NTD4970N-35G is a high-performance Power MOSFET produced by ON Semiconductor, renowned for its efficiency and reliability in a wide range of power applications. This MOSFET is an optimal solution for designers looking to enhance system performance in terms of switching speed, power loss, and thermal management.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses, improving overall energy efficiency in applications.
  • High Current Capability: With a continuous drain current (I<sub>D) of 30A, the NTD4970N-35G can handle high current loads, making it suitable for demanding power applications.
  • High Performance: The MOSFET is designed to provide fast switching performance, which is essential for reducing switching losses in power conversion systems.
  • Robust Thermal Performance: Its excellent thermal characteristics ensure reliable operation even under high temperature conditions, extending the life of the product and the systems in which it is used.

Applications

The NTD4970N-35G is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Switching regulators
  • Automotive applications

Specifications

Parameter Value R<sub>DS(on) 35 mΩ I<sub>D 30 A V<sub>DSS 30 V Package TO-252 (DPAK)

The NTD4970N-35G is packaged in a TO-252 (DPAK) package, which is known for its compact footprint and excellent power dissipation characteristics. It is lead-free and RoHS compliant, addressing environmental concerns and regulatory requirements.

With its robust design and advanced manufacturing, ON Semiconductor's NTD4970N-35G Power MOSFET stands out as a reliable component for high-efficiency power systems. Its balance of performance, efficiency, and thermal management makes it an excellent choice for modern electronic designs.

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