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NTD5862N-1G

Part No NTD5862N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 98A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 115W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NTD58
Standard Package 75 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649752-NTD5862N-1G
Ultra Librarian 3D Model Ultra Librarian NTD5862N-1G CAD Model

Description

ON Semiconductor NTD5862N-1G Power MOSFET

The NTD5862N-1G is a high-performance Power MOSFET from ON Semiconductor, renowned for its efficiency and reliability in a wide range of applications. This robust MOSFET is designed to meet the demanding requirements of modern electronic circuits, providing a perfect solution for power management tasks.

With its advanced technology, the NTD5862N-1G offers low on-resistance and high switching speed, making it an ideal choice for high-efficiency power supplies, motor controls, and other power-intensive applications. The MOSFET comes in a TO-252 (DPAK) package, which is well-suited for compact designs where space is at a premium.

Key Features:

  • Drain-to-Source Voltage (VDS): 60V, which provides a good balance between performance and robustness, suitable for a variety of circuits.
  • Continuous Drain Current (ID): 46A at 25°C, ensuring that the device can handle significant power without overheating.
  • RDS(on): Very low at 8.4 mΩ (typical), which translates into reduced power losses and improved efficiency.
  • Pulsed Drain Current (IDM): 184A, allowing for transient high current operations, useful in applications like motor starting.
  • Fast Switching Speed: Enables high-frequency operation, which is critical for reducing the size of passive components and improving power density.
  • Gate Charge (Qg): Low at 31 nC (typical), which reduces the energy required to switch the device on and off.
  • Operating Temperature Range: -55°C to 175°C, providing a wide range of temperature tolerance for various operating conditions.

The NTD5862N-1G also features a rugged and durable design, with an integrated avalanche diode that provides protection against inductive loads and ensures safe operation under extreme conditions. This MOSFET is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

Whether you're designing power supplies, DC-DC converters, or any other application that requires efficient power switching, the NTD5862N-1G from ON Semiconductor is an excellent choice that combines performance, efficiency, and reliability.

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