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NTD60N02R

Part No NTD60N02R
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 8.5A/32A DPAK
Datasheet
Sample
Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 20 V
Power Dissipation (Max) 1.25W (Ta), 58W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NTD60
Standard Package 75 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649756-NTD60N02R
Ultra Librarian 3D Model Ultra Librarian NTD60N02R CAD Model

Description

ON Semiconductor NTD60N02R Power MOSFET

The NTD60N02R from ON Semiconductor is a high-performance Power MOSFET designed to meet the rigorous demands of a wide range of electronic applications. This device is a part of ON Semiconductor's renowned N-channel MOSFET series, which is known for delivering efficient power management and control in compact, energy-sensitive systems.

Key Features:

  • High Drain-Source Voltage (V<sub>DS): The NTD60N02R can handle a maximum drain-source voltage of 24V, making it suitable for a variety of mid-range power applications.
  • High Continuous Drain Current (I<sub>D): With a continuous drain current of 60A, this MOSFET can manage significant current loads, ensuring reliable performance in high-power circuits.
  • Low On-Resistance (R<sub>DS(on)): The device features an exceptionally low on-resistance of just 8.4 mΩ at V<sub>GS = 10V, which translates to reduced power losses and improved efficiency in operation.
  • Fast Switching Speed: The NTD60N02R is designed for fast switching applications, enabling high-speed operation which is crucial for modern power supply designs and converters.
  • Logic Level Gate Drive: The MOSFET can be driven at logic level voltages, simplifying the drive circuitry and making it compatible with microcontroller outputs.

Applications:

The versatility of the NTD60N02R MOSFET makes it an excellent choice for a broad spectrum of applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Management in Portable Devices
  • Switching Regulators
  • Automotive Applications
  • Power Supply Systems

Package and Reliability:

The NTD60N02R is housed in a robust TO-252 (DPAK) package, which is not only space-efficient but also provides excellent thermal performance. ON Semiconductor's commitment to quality ensures that this MOSFET delivers consistent performance and reliability, making it a trusted component for engineers and designers in the field of power electronics.

With its combination of high current capability, low on-resistance, and fast switching speeds, the NTD60N02R from ON Semiconductor is an ideal choice for those seeking a power MOSFET that does not compromise on performance or efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4635 $57.9375
305+ $0.3804 $116.0220
475+ $0.3684 $174.9900
650+ $0.3566 $231.7900
840+ $0.3448 $289.6320
1,125+ $0.3091 $347.7375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,800 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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