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NTD6415ANLT4G

Part No NTD6415ANLT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 23A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1024pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083849-NTD6415ANLT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD6415ANLT4G CAD Model

Description

The NTD6415ANLT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is specifically designed to address the demanding requirements of power electronic applications, offering a combination of low on-resistance and high switching speed.

Key Features

  • Low On-Resistance: The NTD6415ANLT4G features an ultra-low on-resistance, which minimizes conduction losses and enhances the efficiency of your power management designs.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance.
  • High Current Capability: Engineered to handle high current loads, this component is suitable for demanding applications that require robust current handling.
  • Power Dissipation: It is designed with a substantial power dissipation rating, which ensures reliability and longevity even under high power and temperature conditions.
  • Low Gate Charge: The device has a low gate charge, which reduces the power required to drive the MOSFET, resulting in lower total power consumption.

Applications

The NTD6415ANLT4G is versatile and can be used in a wide range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Automotive applications
  • Switching regulators

Reliability and Quality

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NTD6415ANLT4G is no exception and is manufactured in state-of-the-art facilities, ensuring that it meets the rigorous demands of the industrial and automotive markets. With its robust design and proven performance, this MOSFET is a reliable choice for engineers looking to optimize their power electronic systems.

Environmental Compliance

The NTD6415ANLT4G is RoHS compliant and lead-free, reflecting ON Semiconductor's dedication to environmental sustainability and global regulatory compliance. By using this product, designers can ensure their electronic designs are not only high-performing but also environmentally conscious.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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