EN
  • EN
  • DE

NTD80N02-1G

Part No NTD80N02-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 80A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 2600pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 060632-NTD80N02-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD80N02-1G CAD Model

Description

ON Semiconductor NTD80N02-1G Power MOSFET

The ON Semiconductor NTD80N02-1G is a high-performance Power MOSFET designed to meet the rigorous demands of power regulation applications. This device is part of ON Semiconductor's portfolio of power management solutions, which are known for their reliability and efficiency. The NTD80N02-1G is particularly suitable for high-speed switching applications due to its low on-resistance and high current handling capability.

With a drain-to-source voltage (V<sub>DS) of 24V, the NTD80N02-1G can handle continuous drain currents (I<sub>D) up to 80A, making it an excellent choice for power-intensive applications. It also features a low threshold voltage (V<sub>GS(th)), which enhances its ability to start conducting at lower gate voltages, thus improving its responsiveness in various circuit configurations.

The NTD80N02-1G uses ON Semiconductor's proprietary Trench Technology, which optimizes the device for low on-state resistance (R<sub>DS(on)). This results in reduced conduction losses and improved overall efficiency, which is critical for power supply designs, DC-DC converters, and motor control circuits. The MOSFET's R<sub>DS(on) is specified at a mere 2.5mΩ (typical) at V<sub>GS = 10V, showcasing its ability to conduct high currents with minimal power loss.

Moreover, the NTD80N02-1G is encapsulated in a robust TO-252 (DPAK) package, which not only ensures good thermal performance but also makes it easy to mount on a printed circuit board. Its compact size and surface-mount form factor make it suitable for space-constrained applications while providing sufficient power handling capability.

The device also features fast switching characteristics, with a low gate charge (Q<sub>G) and low reverse transfer capacitance (C<sub>rss), which translates to reduced switching losses and better performance in high-frequency applications. This makes the NTD80N02-1G ideal for use in switch mode power supplies (SMPS), power factor correction (PFC) circuits, and other power conversion systems.

In summary, the ON Semiconductor NTD80N02-1G Power MOSFET is a highly efficient, robust, and versatile component that offers excellent performance for a wide range of power management and switching applications. Its low on-resistance, high current capability, and fast switching speeds make it a preferred choice for engineers and designers looking to optimize their power systems for better performance and reliability.

You May Also Be Interested in

Hitachi, Ltd
Silicon P Channel MOS FET High Speed Switching
Lowest to $1.4264
Rohm Semiconductor
Pch -45V -2.0A Power MOSFET
Lowest to $0.2691
Rohm Semiconductor
Switching (-30V,-4.0A)
Lowest to $6.7475
Texas Instruments
N-CHANNEL NEXFET POWER MOSFET / Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Lowest to $2.8757
Panjit
Advanced Trench Process Technology
Lowest to $0.2356
Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Fairchild/ON Semiconductor
200V N-Channel MOSFET
Need more? Email Us
ON Semiconductor
Ultrahigh-Speed Switching Applications
Lowest to $0.4123
Hitachi, Ltd
Silicon P Channel MOS FET Low FrequencyPower Switching
Need more? Email Us

Top Sellers

ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.9895
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0713
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Texas Instruments
IC BRIDGE DRIVER PAR 36HSSOP
Lowest to $19.3374
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $3.5640
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.2271
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.7023
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.4125
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess