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NTD80N02T4G

Part No NTD80N02T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 80A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 2600pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004190-NTD80N02T4G
Family Name NTD80N02
Introduction Date February 25, 2002
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD80N02T4G CAD Model

Description

Product Overview: NTD80N02T4G from ON Semiconductor

The NTD80N02T4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient power and signal management solutions. This MOSFET is designed to cater to a wide array of applications, ranging from power management to switching circuits. With its robustness and efficiency, it is an ideal choice for designers looking to enhance system reliability and performance.

Key Features

  • Low R<sub>DS(on): The device boasts a low on-resistance, which translates into reduced conduction losses and higher efficiency in applications.
  • High Current Capability: With the ability to handle a continuous drain current (I<sub>D) of up to 80 A, this MOSFET can manage high current loads with ease.
  • Optimized Gate Charge: The MOSFET features an optimized gate charge (Q<sub>g), which improves the switching performance and reduces switching losses.
  • Thermal Management: The device is encapsulated in a surface-mount DPAK package, which aids in excellent thermal dissipation and allows for a compact design.

Applications

The NTD80N02T4G is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Supply Load Switches
  • Battery Management Systems
  • Motor Control Circuits
  • Automotive Systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTD80N02T4G is no exception, with its design and manufacturing processes geared towards ensuring reliability and performance under various conditions. It is RoHS compliant and is designed to meet the stringent requirements of the automotive industry, making it a suitable choice for automotive-grade applications.

Conclusion

In summary, the NTD80N02T4G Power MOSFET from ON Semiconductor is a powerful and efficient solution for engineers looking to optimize their power management and switching systems. Its low R<sub>DS(on), high current handling, and optimized gate charge make it a top contender in its class, offering a blend of performance and reliability that is hard to match.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 97,400 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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