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NTDV2955PT4G

Part No NTDV2955PT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 12A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083867-NTDV2955PT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTDV2955PT4G CAD Model

Description

Product Overview: NTDV2955PT4G from ON Semiconductor

The NTDV2955PT4G is a high-performance P-Channel Field-Effect Transistor (FET) designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This MOSFET is engineered to deliver efficient power conversion and control in a wide variety of applications, making it a versatile component for modern electronic circuits.

The device features a robust and compact design, with a drain-to-source voltage (V<sub>DSS) of -60V and a continuous drain current (I<sub>D) of -12A at 25°C. These specifications ensure that the NTDV2955PT4G can handle significant power and is suitable for high-side switch applications. The low threshold voltage (V<sub>GS(th)) allows for the device to be driven at lower gate voltages, which is advantageous for battery-operated devices and low-voltage circuits.

ON Semiconductor has designed the NTDV2955PT4G with an advanced trench technology that provides reduced on-resistance (R<sub>DS(on)) and minimized gate charge (Q<sub>g), leading to improved overall efficiency. This makes the MOSFET an excellent choice for power management tasks, including load switches, DC-DC converters, and motor control in portable devices, consumer electronics, and automotive systems.

The NTDV2955PT4G comes in a surface-mount DPAK (TO-252) package, which is not only space-saving but also allows for efficient heat dissipation. This packaging, in conjunction with its high power and thermal performance, ensures that the MOSFET can operate reliably in high-temperature environments without the need for additional cooling measures.

In terms of safety and reliability, the NTDV2955PT4G is RoHS compliant and features a maximum junction temperature of 150°C, providing a significant margin for thermal stability. ON Semiconductor's commitment to quality is evident in the design and production of the NTDV2955PT4G, making it a trusted component for designers and engineers looking to optimize their power management solutions.

Overall, the NTDV2955PT4G from ON Semiconductor is a testament to the company's expertise in creating components that enhance performance, reduce energy consumption, and extend the life of the products in which they are used.

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