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NTHL027N65S3HF

Part No NTHL027N65S3HF
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 75A TO247-3 / N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7630 pF @ 400 V
Power Dissipation (Max) 595W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number NTHL027
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NTHL027N65S3HF-ND,NTHL027N65S3HFOS
Standard Package 30
Win Source Part Number 1324742-NTHL027N65S3HF
Ultra Librarian 3D Model Ultra Librarian NTHL027N65S3HF CAD Model

Description

Introducing the NTHL027N65S3HF from ON Semiconductor

The NTHL027N65S3HF is a state-of-the-art silicon carbide (SiC) N-channel MOSFET, brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance power MOSFET is designed to meet the demanding needs of a wide range of applications, offering superior efficiency, faster switching speeds, and higher temperature operation compared to traditional silicon-based MOSFETs.

With a drain-to-source voltage (V<sub>DS) of 650V and a continuous drain current (I<sub>D) of 27A at 25°C, this MOSFET is capable of handling high-power applications with ease. The NTHL027N65S3HF is particularly suited for electric vehicle (EV) chargers, solar inverters, uninterruptible power supplies (UPS), and other applications where efficiency and reliability are paramount.

The device features a low on-resistance (R<sub>DS(on)) of only 65mΩ at V<sub>GS = 18V, which minimizes conduction losses and improves overall system efficiency. Additionally, the MOSFET's ultra-low gate charge (Q<sub>G) and low effective output capacitance (C<sub>oss eff.) contribute to reduced switching losses, making high-frequency operation more energy-efficient.

The NTHL027N65S3HF is housed in a highly durable and compact H2PAK-7 package, which not only ensures a small footprint but also provides excellent thermal performance. The package is designed to handle high surge currents and features a maximum junction temperature of 175°C, allowing for robust operation even under extreme conditions.

ON Semiconductor's commitment to environmental sustainability is evident in the NTHL027N65S3HF, as it is RoHS compliant and free from harmful substances. Customers can be assured that they are choosing a product that meets the highest standards for both performance and environmental responsibility.

In summary, the NTHL027N65S3HF from ON Semiconductor is a cutting-edge solution for high-power, high-efficiency applications. Its robust design, low on-resistance, and fast switching capabilities make it an ideal choice for engineers looking to enhance system performance while reducing energy consumption.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.0208 $54.1248
14+ $7.4017 $103.6238
21+ $7.1704 $150.5784
29+ $6.9391 $201.2339
38+ $6.7078 $254.8964
50+ $6.0139 $300.6950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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