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NTHS4166NT1G

Part No NTHS4166NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.9A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 4.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 110946-NTHS4166NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHS4166NT1G CAD Model

Description

The NTHS4166NT1G is a high-performance, dual N-Channel MOSFET from ON Semiconductor, designed to deliver efficient power management and signal conditioning in a compact, surface-mount package. This product is part of ON Semiconductor's extensive portfolio of MOSFETs that are known for their reliability, efficiency, and advanced technology.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current rating of up to 3.5 A, this MOSFET can handle high current applications with ease.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for compact circuit designs and simplifies the layout for applications requiring two N-Channel MOSFETs.
  • Low Threshold Voltage: A low threshold voltage ensures that the MOSFET can be easily driven by low-voltage logic signals, making it suitable for a wide range of control applications.
  • High-Speed Switching: Designed for high-speed switching applications, the NTHS4166NT1G ensures rapid transitions between on and off states, reducing switching losses.
  • Thermal Management: The device's power dissipation and thermal characteristics are optimized for improved reliability and performance under varying conditions.

Applications

The NTHS4166NT1G is ideal for a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switching
  • Motor Control Circuits
  • Signal Conditioning

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly products that meet the highest quality and reliability standards. The NTHS4166NT1G is compliant with RoHS (Restriction of Hazardous Substances) and is lead-free, ensuring that it meets global environmental regulations and standards.

Conclusion

The NTHS4166NT1G from ON Semiconductor is an exemplary choice for designers who require a reliable, high-performance dual N-Channel MOSFET. Its combination of low on-resistance, high current capability, and efficient switching makes it a versatile component in power management and signal conditioning applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8797 $52.7820
140+ $0.7219 $101.0660
215+ $0.6993 $150.3495
300+ $0.6767 $203.0100
385+ $0.6542 $251.8670
515+ $0.5865 $302.0475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,830 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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