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NTJD1155LT1G

Part No NTJD1155LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 8V 1.3A SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 175 mOhm @ 1.2A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Maximum Power Dissipation 400mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 025772-NTJD1155LT1G
Family Name NTJD1155L
Introduction Date December 08, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Portable Devices, Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian NTJD1155LT1G CAD Model

Description

ON Semiconductor NTJD1155LT1G - Product Overview

The NTJD1155LT1G is a high-performance, dual N- and P-Channel Power MOSFET from ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to deliver efficient power management and switching with a compact footprint, making it ideal for a wide range of applications.

Key Features

  • Device Type: Power MOSFET, Dual N- and P-Channel
  • Package: Ultra-small leadless package (2x2mm UDFN)
  • Drain-to-Source Voltage (V<sub>DS): N-Channel: 20V, P-Channel: -20V
  • Continuous Drain Current (I<sub>D): N-Channel: 3A, P-Channel: -2.4A
  • Power Dissipation (P<sub>D): 1.25W
  • R<sub>DS(on): Low on-resistance for efficient operation
  • Gate Charge (Q<sub>g): Optimized for low gate charge
  • Compliance: RoHS compliant

Applications

The NTJD1155LT1G is versatile and can be used in a variety of applications, including:

  • Power management for portable and battery-powered devices
  • DC/DC converters
  • Load/switching circuits
  • Motor control applications

Performance and Quality

ON Semiconductor's NTJD1155LT1G is engineered for performance and reliability. The device's low on-resistance ensures minimal voltage drop and power loss, providing a more efficient circuit operation. Additionally, the optimized gate charge reduces switching losses, which is critical for high-frequency applications.

Environmental Compliance

Environmental sustainability is a priority for ON Semiconductor. The NTJD1155LT1G is RoHS compliant, meaning it is free from hazardous substances commonly used in electronics. This compliance ensures that the product is not only safe for consumers but also minimizes the environmental impact throughout its lifecycle.

Conclusion

The NTJD1155LT1G from ON Semiconductor offers a powerful solution for designers seeking a dual N- and P-Channel Power MOSFET with a compact form factor. Its low on-resistance, high current capability, and efficiency make it a top choice for a range of power management applications. With ON Semiconductor's commitment to quality and environmental standards, the NTJD1155LT1G stands out as a reliable and eco-friendly component for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1398 $50.3280
875+ $0.1147 $100.3625
1,355+ $0.1111 $150.5405
1,865+ $0.1075 $200.4875
2,410+ $0.1039 $250.3990
3,220+ $0.0932 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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