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NTJD4001NT1G

Part No NTJD4001NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.25A SOT-363
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 250mA
Maximum Rds On at Id,Vgs 1.5 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Gate Charge 1.3nC @ 5V
Max Input Capacitance 33pF @ 5V
Maximum Power Dissipation 272mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 025773-NTJD4001NT1G
Family Name NTJD4001N
Introduction Date August 20, 2003
ECCN EAR99
Country of Origin China, Czech Republic
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian NTJD4001NT1G CAD Model

Description

ON Semiconductor NTJD4001NT1G Product Overview

The NTJD4001NT1G is a high-performance, dual N-channel Field Effect Transistor (FET) from ON Semiconductor, designed for a wide array of applications that demand efficiency and reliability. This compact, surface-mounted device is housed in a leadless SOT-363 package, making it an ideal choice for space-constrained applications.

Featuring two independent N-channel MOSFETs, the NTJD4001NT1G is capable of handling continuous drain currents up to 0.5 A, with a maximum drain-source voltage (VDS) of 20 V. This makes it suitable for a variety of switching applications, including power management in portable and battery-powered devices, where energy efficiency is paramount.

The transistor's low on-state resistance (RDS(on)) minimizes power loss and heat generation, thereby enhancing system reliability and performance. The RDS(on) is typically 600 mΩ at a gate-source voltage (VGS) of 4.5 V, which is a testament to the device's efficiency in conducting current when in the 'on' state.

The NTJD4001NT1G also boasts fast switching speeds, which is crucial for high-frequency applications. This, combined with its low threshold voltage, allows for precise control over the switching processes, contributing to the overall efficiency of the circuitry it's integrated into.

ON Semiconductor has designed the NTJD4001NT1G with a focus on reliability. It features built-in electrostatic discharge (ESD) protection, which safeguards the device against sudden spikes in voltage that could otherwise cause damage. This ESD protection, along with the device's inherent robustness, ensures a long operational lifespan, reducing maintenance and replacement costs over time.

With its compact size, high efficiency, and durability, the NTJD4001NT1G from ON Semiconductor is an excellent choice for designers looking to optimize their power management solutions. Whether it's for consumer electronics, medical devices, or industrial automation, this dual N-channel MOSFET stands out as a versatile component that can help enhance the performance and reliability of your electronic designs.

For detailed specifications and application guidance, engineers and designers are encouraged to consult the NTJD4001NT1G datasheet available on the ON Semiconductor website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
780+ $0.0645 $50.3100
1,890+ $0.0530 $100.1700
2,925+ $0.0513 $150.0525
4,025+ $0.0497 $200.0425
5,210+ $0.0480 $250.0800
6,980+ $0.0430 $300.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 236,737 pieces
MOQ: 780 pcs
Order Increment : 1 pcs
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